SNVS615K January   2010  – February 2018 LM27402

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Typical Application Circuit
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Performance Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Wide Input Voltage Range
      2. 7.3.2  UVLO
      3. 7.3.3  Precision Enable
      4. 7.3.4  Soft-Start and Voltage Tracking
      5. 7.3.5  Output Voltage Setpoint and Accuracy
      6. 7.3.6  Voltage-Mode Control
      7. 7.3.7  Power Good
      8. 7.3.8  Inductor-DCR-Based Overcurrent Protection
      9. 7.3.9  Current Sensing
      10. 7.3.10 Power MOSFET Gate Drivers
      11. 7.3.11 Pre-Bias Start-up
    4. 7.4 Device Functional Modes
      1. 7.4.1 Fault Conditions
        1. 7.4.1.1 Thermal Protection
        2. 7.4.1.2 Current Limit
        3. 7.4.1.3 Negative Current Limit
        4. 7.4.1.4 Undervoltage Threshold (UVT)
        5. 7.4.1.5 Overvoltage Threshold (OVT)
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1  Converter Design
      2. 8.1.2  Inductor Selection (L)
      3. 8.1.3  Output Capacitor Selection (COUT)
      4. 8.1.4  Input Capacitor Selection (CIN)
      5. 8.1.5  Using Precision Enable
      6. 8.1.6  Setting the Soft-Start Time
      7. 8.1.7  Tracking
      8. 8.1.8  Setting the Switching Frequency
      9. 8.1.9  Setting the Current Limit Threshold
      10. 8.1.10 Control Loop Compensation
      11. 8.1.11 MOSFET Gate Drivers
      12. 8.1.12 Power Loss and Efficiency Calculations
        1. 8.1.12.1 Power MOSFETs
        2. 8.1.12.2 High-Side Power MOSFET
        3. 8.1.12.3 Low-Side Power MOSFET
        4. 8.1.12.4 Gate-Charge Loss
        5. 8.1.12.5 Input and Output Capacitor ESR Losses
        6. 8.1.12.6 Inductor Losses
        7. 8.1.12.7 Controller Losses
        8. 8.1.12.8 Overall Efficiency
    2. 8.2 Typical Applications
      1. 8.2.1 Example Circuit 1
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Custom Design With WEBENCH® Tools
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Example Circuit 2
      3. 8.2.3 Example Circuit 3
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Power Stage Layout
      2. 10.1.2 Gate Drive Layout
      3. 10.1.3 Controller Layout
      4. 10.1.4 Thermal Design and Layout
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
      2. 11.1.2 Development Support
        1. 11.1.2.1 Custom Design With WEBENCH® Tools
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Community Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.1.12.7 Controller Losses

The controller loss remains constant and typically contributes a very small loss of power. The quiescent current is the main factor in terms of power loss attributed to the controller and it remains constant at 4 mA. The quiescent current power loss equation is:

Equation 31. LM27402 30092660.gif

The controller IQ power loss equation includes the IQ current (4 mA) and the input voltage VIN.

It is also important to calculate the power dissipated in the controller itself due to the gate charge component of current flowing from VIN to VDD. This can cause the controller to operate at an elevated temperature given the power dissipation of the LDO pass device. The next equation calculates the power dissipated by the internal LDO.

Equation 32. LM27402 30092661.gif

PLDO is the power dissipated in the LDO, QGHS and QGLS are the high-side and low-side MOSFET gate charges, respectively.