SNVS114G May 1999 – February 2015 LM3940
For related documentation see the following:
AN-1028 Maximum Power Enhancement Techniques for Power Packages, SNVA036
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.