SNOS455H May   2000  – March 2025 LM4050-N , LM4050-N-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Electrical Characteristics: 2V Option
    6. 5.6  Electrical Characteristics: 2.5V Option
    7. 5.7  Electrical Characteristics: 4.1V Option
    8. 5.8  Electrical Characteristics: 5V Option
    9. 5.9  Electrical Characteristics: 8.2V Option
    10. 5.10 Electrical Characteristics: 10V Option
    11. 5.11 Typical Characteristics
      1. 5.11.1 Start-Up Characteristics
  7. 6 Parameter Measurement Information
    1.     20
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Shunt Regulator
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Precision Reference for an Analog-to-Digital Converter
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
      3. 8.2.3 VOUT Bounded Amplifier
        1. 8.2.3.1 Design Requirements
        2. 8.2.3.2 Detailed Design Procedure
      4. 8.2.4 VIN Bounded Amplifier
        1. 8.2.4.1 Design Requirements
        2. 8.2.4.2 Detailed Design Procedure
      5. 8.2.5 ±4.096 Precision Reference
        1. 8.2.5.1 Design Requirements
        2. 8.2.5.2 Detailed Design Procedure
      6. 8.2.6 ±1mA Precision Current Sources
        1. 8.2.6.1 Design Requirements
        2. 8.2.6.2 Detailed Design Procedure
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Support Resources
    2. 9.2 Trademarks
    3. 9.3 Electrostatic Discharge Caution
    4. 9.4 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.10 Electrical Characteristics: 10V Option

All other limits TA = TJ = 25°C. The grades A, B and C designate initial Reverse Breakdown Voltage tolerances of ±0.1% and ±0.2% and 0.5% respectively.
PARAMETERTEST CONDITIONSMIN(4)TYP(3)MAX(4)UNIT
VRReverse Breakdown VoltageIR = 150μA10V
Reverse Breakdown Voltage Tolerance (5)IR = 150μALM4050AIM3, LM4050AEM3±10mV (max)
LM4050BIM3, LM4050BEM3±20
LM4050CIM3, LM4050CEM3±50
Industrial Temp. Range
TA = TJ = TMIN to TMAX		LM4050AIM3±43
LM4050BIM3±53
LM4050CIM3±83
Extended Temp. Range
TA = TJ = TMIN to TMAX		LM4050AEM3±60
LM4050BEM3±70
LM4050CEM3±100
IRMINMinimum Operating CurrentTA = TJ = 25°C80100μA
Industrial Temp. Range
TA = TJ = TMIN to TMAX		103
Extended Temp. Range
TA = TJ = TMIN to TMAX		110
ΔVR/ΔTAverage Reverse Breakdown Voltage Temperature Coefficient (5)IR = 10mA±40ppm/°C
IR = 1mA±20
IR = 150μA, TA = TJ = 25°C±20
IR = 150μA
TA = TJ = TMIN to TMAX		±50
ΔVR/ΔIRReverse Breakdown Voltage Change with Operating Current Change (6)IRMIN ≤ IR ≤ 1mA, TA = TJ = 25°C2.53.8mV
IRMIN ≤ IR ≤ 1mA
TA = TJ = TMIN to TMAX		6
1mA ≤ IR ≤ 15mA, TA = TJ = 25°C812
1mA ≤ IR ≤ 15mA
TA = TJ = TMIN to TMAX		23
ZRReverse Dynamic ImpedanceIR = 1mA, f = 120Hz,
IAC = 0.1 IR		0.7Ω
eNWideband NoiseIR = 150μA
10Hz ≤ f ≤ 10kHz		150μVrms
ΔVRReverse Breakdown Voltage Long Term Stabilityt = 1000 hrs
T = 25°C ±0.1°C
IR = 150μA		120ppm
VHYSTThermal Hysteresis(7)ΔT = −40°C to 125°C2.8mV
(1) The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), RθJA (junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax = (TJmax − TA)/RθJA or the number given in the Absolute Maximum Ratings, whichever is lower. For the LM4050-N, TJmax = 150°C, and the typical thermal resistance (RθJA), when board mounted, is 326°C/W for the SOT-23 package.
(2) High junction temperatures degrade operating lifetimes. Operating lifetime is de-rated for junction temperatures greater than 125°C.
(3) Typicals are at TJ = 25°C and represent most likely parametric norm.
(4) Limits are 100% production tested at 25°C. Limits over temperature are verified through correlation using Statistical Quality Control (SQC) methods. The limits are used to calculate National's AOQL.
(5) The overtemperature limit for Reverse Breakdown Voltage Tolerance is defined as the room temperature Reverse Breakdown Voltage Tolerance ±[(ΔV R/ΔT)(maxΔT)(VR)]. Where, ΔVR/ΔT is the VR temperature coefficient, maxΔT is the maximum difference in temperature from the reference point of 25°C to T MIN or TMAX, and VR is the reverse breakdown voltage. The total overtemperature tolerance for the different grades in the industrial temperature range where maxΔT = 65°C is shown below:  A-grade: ±0.425% = ±0.1% ±50ppm/°C × 65°C  B-grade: ±0.525% = ±0.2% ±50ppm/°C × 65°C  C-grade: ±0.825% = ±0.5% ±50ppm/°C × 65°C. Therefore, as an example, the A-grade LM4050-N-2.5 has an overtemperature Reverse Breakdown Voltage tolerance of ±2.5V × 0.425% = ±11 mV.
(6) Load regulation is measured on pulse basis from no load to the specified load current. Output changes due to die temperature change must be taken into account separately.
(7) Thermal hysteresis is defined as the difference in voltage measured at 25°C after cycling to temperature –40°C and the 25°C measurement after cycling to temperature 125°C.