SNOS455H May   2000  – March 2025 LM4050-N , LM4050-N-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Electrical Characteristics: 2V Option
    6. 5.6  Electrical Characteristics: 2.5V Option
    7. 5.7  Electrical Characteristics: 4.1V Option
    8. 5.8  Electrical Characteristics: 5V Option
    9. 5.9  Electrical Characteristics: 8.2V Option
    10. 5.10 Electrical Characteristics: 10V Option
    11. 5.11 Typical Characteristics
      1. 5.11.1 Start-Up Characteristics
  7. 6 Parameter Measurement Information
    1.     20
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Shunt Regulator
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Precision Reference for an Analog-to-Digital Converter
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
      3. 8.2.3 VOUT Bounded Amplifier
        1. 8.2.3.1 Design Requirements
        2. 8.2.3.2 Detailed Design Procedure
      4. 8.2.4 VIN Bounded Amplifier
        1. 8.2.4.1 Design Requirements
        2. 8.2.4.2 Detailed Design Procedure
      5. 8.2.5 ±4.096 Precision Reference
        1. 8.2.5.1 Design Requirements
        2. 8.2.5.2 Detailed Design Procedure
      6. 8.2.6 ±1mA Precision Current Sources
        1. 8.2.6.1 Design Requirements
        2. 8.2.6.2 Detailed Design Procedure
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Support Resources
    2. 9.2 Trademarks
    3. 9.3 Electrostatic Discharge Caution
    4. 9.4 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.7 Electrical Characteristics: 4.1V Option

All other limits TA = TJ = 25°C. The grades A, B and C designate initial Reverse Breakdown Voltage tolerances of ±0.1%, ±0.2%, and 0.5% respectively.
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
VR Reverse Breakdown Voltage IR = 100μA 4.096 V
Reverse Breakdown Voltage Tolerance(1) IR = 100μA LM4050AIM3, LM4050AEM3 ±4.1 mV
LM4050BIM3,LM4050BEM3 ±8.2
LM4050CIM3, LM4050CEM3 ±21
Industrial temperature range,
TA = TJ = TMIN to TMAX		 LM4050AIM3 ±18
LM4050BIM3 ±22
LM4050CIM3 ±34
Extended temperature range,
TA = TJ = TMIN to TMAX		 LM4050AEM3 ±25
LM4050BEM3 ±29
LM4050CEM3 ±41
IRMIN Minimum Operating Current TA = TJ = 25°C 52 68 μA
Industrial temperature range,
TA = TJ = TMIN to TMAX		 73
Extended temperature range,
TA = TJ = TMIN to TMAX		 78
ΔVR/ΔT Average reverse breakdown voltage temperature coefficient(1) IR = 10mA ±30 ppm/°C
IR = 1mA ±20
IR = 100μA, TA = TJ = 25°C ±20
IR = 100μA,
TA = TJ = TMIN to TMAX		 ±50
ΔVR/ΔIR Reverse breakdown voltage change with operating current change(1) IRMIN ≤ IR ≤ 1mA, TA = TJ = 25°C 0.2 0.9 mV
IRMIN ≤ IR ≤ 1mA,
TA = TJ = TMIN to TMAX		 1.2
1mA ≤ IR ≤ 15mA, TA = TJ = 25°C 2 7
1mA ≤ IR ≤ 15mA,
TA = TJ = TMIN to TMAX		 10
ZR Reverse dynamic impedance IR = 1mA, f = 120Hz, IAC = 0.1 IR 0.5 Ω
eN Wideband noise IR = 100μA, 10Hz ≤ f ≤ 10kHz 93 μVrms
ΔVR Reverse breakdown voltage long term stability t = 1000 hrs, T = 25°C ±0.1°C, IR = 100μA 120 ppm
VHYST Thermal hysteresis(1) ΔT = −40°C to 125°C 1.148 mV