SNOS455H May   2000  – March 2025 LM4050-N , LM4050-N-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Electrical Characteristics: 2V Option
    6. 5.6  Electrical Characteristics: 2.5V Option
    7. 5.7  Electrical Characteristics: 4.1V Option
    8. 5.8  Electrical Characteristics: 5V Option
    9. 5.9  Electrical Characteristics: 8.2V Option
    10. 5.10 Electrical Characteristics: 10V Option
    11. 5.11 Typical Characteristics
      1. 5.11.1 Start-Up Characteristics
  7. 6 Parameter Measurement Information
    1.     20
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Shunt Regulator
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Precision Reference for an Analog-to-Digital Converter
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
      3. 8.2.3 VOUT Bounded Amplifier
        1. 8.2.3.1 Design Requirements
        2. 8.2.3.2 Detailed Design Procedure
      4. 8.2.4 VIN Bounded Amplifier
        1. 8.2.4.1 Design Requirements
        2. 8.2.4.2 Detailed Design Procedure
      5. 8.2.5 ±4.096 Precision Reference
        1. 8.2.5.1 Design Requirements
        2. 8.2.5.2 Detailed Design Procedure
      6. 8.2.6 ±1mA Precision Current Sources
        1. 8.2.6.1 Design Requirements
        2. 8.2.6.2 Detailed Design Procedure
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Support Resources
    2. 9.2 Trademarks
    3. 9.3 Electrostatic Discharge Caution
    4. 9.4 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.6 Electrical Characteristics: 2.5V Option

All other limits TA = TJ = 25°C. The grades A, B and C designate initial Reverse Breakdown Voltage tolerances of ±0.1%, ±0.2%, and 0.5% respectively.
PARAMETERTEST CONDITIONSMIN(1)TYP(1)MAX(1)UNIT
VRReverse breakdown voltageIR = 100μA2.500V
IR = 100μALM4050AIM3, LM4050AEM3±2.5mV
LM4050BIM3, LM4050BEM3±5
LM4050CIM3, LM4050CEM3±13
Reverse breakdown voltage tolerance(1)Industrial temperature range,
TA = TJ = TMIN to TMAX		LM4050AIM3±11mV
LM4050BIM3±24
LM4050CIM3±21
Extended temperature range,
TA = TJ = TMIN to TMAX		LM4050AEM3±15
LM4050BEM3±18
LM4050CEM3±25
IRMINMinimum operating currentTA = TJ = 25°C4160μA
TA = TJ = TMIN to TMAX65
ΔVR/ΔTAverage reverse breakdown voltage temperature coefficient(1)IR = 10mA±20ppm/°C
IR = 1mA±15
IR = 100μA, TA = TJ = 25°C±15
IR = 100μA,
TA = TJ = TMIN to TMAX		±50
ΔVR/ΔIRReverse breakdown voltage change with operating current change(1)IRMIN ≤ IR ≤ 1mA, TA = TJ = 25°C0.30.8mV
IRMIN ≤ IR ≤ 1mA
TA = TJ = TMIN to TMAX		1.2
ΔVR/ΔIRReverse breakdown voltage change with operating current change(1)1mA ≤ IR ≤ 15mA, TA = TJ = 25°C2.36mV
1mA ≤ IR ≤ 15mA,
TA = TJ = TMIN to TMAX		8
ZRReverse dynamic impedanceIR = 1mA, f = 120Hz, IAC = 0.1 IR0.3Ω
eNWideband noiseIR = 100μA, 10Hz ≤ f ≤ 10kHz41μVrms
ΔVRReverse breakdown voltage long term stabilityt = 1000 hrs, T = 25°C ±0.1°C, IR = 100μA120ppm
VHYSTThermal hysteresis (1)ΔT = −40°C to 125°C07mV