SLUSF82 January   2024 LMG3100R017

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
  7. 6 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 Propagation Delay and Mismatch Measurement
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Control Inputs
      2. 8.3.2 Start-up and UVLO
      3. 8.3.3 Bootstrap Supply Voltage Clamping
      4. 8.3.4 Level Shift
    4. 8.4 Device Functional Modes
  10.   Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 VCC Bypass Capacitor
        2. 9.2.2.2 Bootstrap Capacitor
        3. 9.2.2.3 Slew Rate Control
        4. 9.2.2.4 Use With Analog Controllers
        5. 9.2.2.5 Power Dissipation
    3.     Power Supply Recommendations
    4. 9.3 Layout
      1. 9.3.1 Layout Guidelines
      2. 9.3.2 Layout Examples
  11. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  12. 10Revision History
  13. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Package Information
    2. 11.2 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • VBE|15
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

The LMG3100 device is a 90V, 97A Gallium Nitride (GaN) with integrated driver. The device consists of a 100V GaN FET driven by a high-frequency GaN FET driver. The LMG3100 incorporates a high side level shifter and bootstrap circuit, so that two LMG3100 devices can be used to form a half bridge without needing an additional level shifter.

GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance CISS and output capacitance COSS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG3100 device is available in a 6.5mm × 4mm × 0.89mm lead-free package and can be easily mounted on PCBs.

The TTL logic compatible inputs can support 3.3V and 5V logic levels regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.

The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor.

Package Information
PART NUMBER PACKAGE(1) PACKAGE SIZE(2)
LMG3100R017 VBE (VQFN, 15) 6.50mm × 4.0mm
(1) For all available packages, see the orderable addendum at the end of the data sheet.
(2) The package size (length × width) is a nominal value and includes pins, where applicable.
GUID-20230227-SS0I-TPVJ-NCRZ-QN6TMLX8SZ9K-low.svg Simplified Block Diagram