SLUSF82 January   2024 LMG3100R017

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
  7. 6 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 Propagation Delay and Mismatch Measurement
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Control Inputs
      2. 8.3.2 Start-up and UVLO
      3. 8.3.3 Bootstrap Supply Voltage Clamping
      4. 8.3.4 Level Shift
    4. 8.4 Device Functional Modes
  10.   Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 VCC Bypass Capacitor
        2. 9.2.2.2 Bootstrap Capacitor
        3. 9.2.2.3 Slew Rate Control
        4. 9.2.2.4 Use With Analog Controllers
        5. 9.2.2.5 Power Dissipation
    3.     Power Supply Recommendations
    4. 9.3 Layout
      1. 9.3.1 Layout Guidelines
      2. 9.3.2 Layout Examples
  11. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  12. 10Revision History
  13. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Package Information
    2. 11.2 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • VBE|15
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
DRN to SRC -5 100 V
DRN to SRC (pulsed, 100-ms max duration)(2) 120 V
HB to AGND -0.3 100 V
HS to AGND -5 93 V
HI to AGND -0.3 6 V
LI to AGND -0.3 6 V
VCC to AGND -0.3 6 V
HB to HS -0.3 6 V
HB to VCC 0 93 V
IOUT from DRN pin (Continuous), TJ = 25℃ 97 A
IOUT from DRN pin (Pulsed, 300 µs), TJ = 25℃ 350 A
Junction Temperature, TJ -40 150 °C
Storage Temperature, Tstg -40 150 °C
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
(2) GaN FET can withstand 1000 pulses up to 120V of 100ms duration and less than 1% duty cycle over its lifetime.