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LMG3100R017

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100V 1.7mΩ GaN FET with integrated driver

Product details

VDS (max) (V) 100 RDS(on) (mΩ) 1.7 ID (max) (A) 97 Features Built-in bootstrap diode, Integrated FET, Top-side cooled Rating Catalog Operating temperature range (°C) -40 to 125
VDS (max) (V) 100 RDS(on) (mΩ) 1.7 ID (max) (A) 97 Features Built-in bootstrap diode, Integrated FET, Top-side cooled Rating Catalog Operating temperature range (°C) -40 to 125
UNKNOWN (VBE) 15 See data sheet
  • Integrated 1.7mΩ GaN FET and driver
  • Interated high-side level shift and bootstrap
  • Two LGM3100 can form a half-bridge
    • No external level shifter needed
  • 90V continuous, 100V pulsed voltage rating
  • Package optimized for easy PCB layout
  • 5V external bias power supply
  • Supports 3.3V and 5V input logic levels
  • High slew rate switching with low ringing
  • Gate driver capable of up to 10MHz switching
  • Internal bootstrap supply voltage clamping to prevent GaN FET overdrive
  • Supply rail undervoltage lockout protection
  • Excellent propagation delay (29.5ns typical) and matching (12ns typical)
  • Low power consumption
  • Exposed top QFN package for connection to heatsink
  • Integrated 1.7mΩ GaN FET and driver
  • Interated high-side level shift and bootstrap
  • Two LGM3100 can form a half-bridge
    • No external level shifter needed
  • 90V continuous, 100V pulsed voltage rating
  • Package optimized for easy PCB layout
  • 5V external bias power supply
  • Supports 3.3V and 5V input logic levels
  • High slew rate switching with low ringing
  • Gate driver capable of up to 10MHz switching
  • Internal bootstrap supply voltage clamping to prevent GaN FET overdrive
  • Supply rail undervoltage lockout protection
  • Excellent propagation delay (29.5ns typical) and matching (12ns typical)
  • Low power consumption
  • Exposed top QFN package for connection to heatsink

The LMG3100 device is a 90V, 97A Gallium Nitride (GaN) with integrated driver. The device consists of a 100V GaN FET driven by a high-frequency GaN FET driver. The LMG3100 incorporates a high side level shifter and bootstrap circuit, so that two LMG3100 devices can be used to form a half bridge without needing an additional level shifter.

GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance CISS and output capacitance COSS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG3100 device is available in a 6.5mm × 4mm × 0.89mm lead-free package and can be easily mounted on PCBs.

The TTL logic compatible inputs can support 3.3V and 5V logic levels regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.

The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor.

The LMG3100 device is a 90V, 97A Gallium Nitride (GaN) with integrated driver. The device consists of a 100V GaN FET driven by a high-frequency GaN FET driver. The LMG3100 incorporates a high side level shifter and bootstrap circuit, so that two LMG3100 devices can be used to form a half bridge without needing an additional level shifter.

GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance CISS and output capacitance COSS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG3100 device is available in a 6.5mm × 4mm × 0.89mm lead-free package and can be easily mounted on PCBs.

The TTL logic compatible inputs can support 3.3V and 5V logic levels regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.

The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor.

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Technical documentation

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* Data sheet LMG3100R017 100V, 97A GaN FET With Integrated Driver datasheet PDF | HTML 23 Jan 2024
Technical article GaN 可推動電子設計轉型的 4 種中電壓應用 PDF | HTML 20 Feb 2024
Technical article GaN이 전자 설계를 혁신하는 4가지 중전압 애플리케이션 PDF | HTML 20 Feb 2024
Technical article Four mid-voltage applications where GaN will transform electronic designs PDF | HTML 17 Feb 2024

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

LMG3100EVM-089 — LMG3100 evaluation module

The LMG3100 evaluation module (EVM) is a compact easy-to-use power stage with an external PWM signal. The board can be configured as a buck converter, boost converter or other converter topology using a half bridge. The EVM features two LMG3100 power modules, each with one 100V 1.7mΩ GaN FET with (...)
User guide: PDF | HTML
Not available on TI.com
Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Reference designs

PMP23392 — Dual-phase buck converter reference design using GaN FETs for 48V automotive applications

This reference design utilizes two LM5148-Q1 single-phase synchronous buck controllers and four LMG3100R017 GaN FETs configured as a dual-phase, interleaved, synchronous buck converter. The converter generates a regulated 5V output capable of delivering a nominal 30A of current to the load, with a (...)
Test report: PDF
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