SNVS716H March   2011  – February 2016 LMZ12008

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specification
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Output Overvoltage Protection
      2. 7.3.2 Current Limit
      3. 7.3.3 Thermal Protection
      4. 7.3.4 Prebiased Start-Up
    4. 7.4 Device Functional Modes
      1. 7.4.1 Discontinuous Conduction and Continuous Conduction Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Enable Divider, RENT, RENB and RENH Selection
        2. 8.2.2.2 Output Voltage Selection
        3. 8.2.2.3 Soft-Start Capacitor Selection
        4. 8.2.2.4 Tracking Supply Divider Option
        5. 8.2.2.5 COUT Selection
        6. 8.2.2.6 CIN Selection
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Examples
    3. 10.3 Power Dissipation and Thermal Considerations
    4. 10.4 Power Module SMT Guidelines
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
      2. 11.1.2 Development Support
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specification

6.1 Absolute Maximum Ratings (1)(2)(3)

MIN MAX UNIT
VIN to PGND –0.3 24 V
EN to AGND –0.3 5.5 V
SS, FB to AGND –0.3 2.5 V
AGND to PGND –0.3 0.3 V
Junction Temperature 150 °C
Peak Reflow Case Temperature (30 sec) 245 °C
Storage Temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications.
(3) For soldering specifications, refer to the following document: SNOA549

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions(1)

MIN MAX UNIT
VIN 6 20 V
EN 0 5 V
Operation Junction Temperature −40 125 °C
(1) Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the device is intended to be functional. For ensured specifications and test conditions, see the Electrical Characteristics.

6.4 Thermal Information

THERMAL METRIC(1) LMZ12008 UNIT
NDY
11 PINS
RθJA Junction-to-ambient thermal resistance Natural Convection 9.9 °C/W
225 LFPM 6.8
500 LFPM 5.2
RθJC(top) Junction-to-case (top) thermal resistance 1.0 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

Limits are for TJ = 25°C unless otherwise specified. Minimum and Maximum limits are ensured through test, design or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Unless otherwise stated the following conditions apply: VIN = 12V, VOUT = 3.3V(1)
PARAMETER TEST CONDITIONS MIN(2) TYP(3) MAX(2) UNIT
SYSTEM PARAMETERS
ENABLE CONTROL
VEN EN threshold VEN rising 1.274 V
over the junction temperature (TJ) range of –40°C to +125°C 1.096 1.452
IEN-HYS EN hysteresis source current VEN > 1.274 V 13 µA
SOFT-START
ISS SS source current VSS = 0 V 50 µA
over the junction temperature (TJ) range of –40°C to +125°C 40 60
tSS Internal soft-start interval 1.6 msec
CURRENT LIMIT
ICL Current limit threshold DC average 10.5 A
INTERNAL SWITCHING OSCILLATOR
fosc Free-running oscillator frequency 314 359 404 kHz
REGULATION AND OVERVOLTAGE COMPARATOR
VFB In-regulation feedback voltage VSS >+ 0.8 V
IO = 8 A		 0.795 V
over the junction temperature (TJ) range of –40°C to +125°C 0.775 0.815
VFB-OV Feedback overvoltage protection threshold 0.86 V
IFB Feedback input bias current 5 nA
IQ Non-Switching Quiescent Current 3 mA
ISD Shutdown Quiescent Current VEN = 0 V 32 μA
Dmax Maximum Duty Factor 85%
THERMAL CHARACTERISTICS
TSD Thermal Shutdown Rising 165 °C
TSD-HYST Thermal shutdown hysteresis Falling 15 °C
PERFORMANCE PARAMETERS(4)
ΔVO Output voltage ripple BW at 20 MHz 24 mVPP
ΔVO/ΔVIN Line regulation VIN = 12 V to 20 V, IOUT= 8 A ±0.2%
ΔVO/ΔIOUT Load regulation VIN = 12 V, IOUT= 0.001 A to 8 A 1 mV/A
η Peak efficiency VIN = 12 V VOUT = 3.3 V, IOUT = 5 A 89.5%
η Full load efficiency VIN = 12 V VOUT = 3.3 V, IOUT = 8 A 88.5%
(1) EN 55022:2006, +A1:2007, FCC Part 15 Subpart B, tested on Evaluation Board with EMI configuration
(2) Min and Max limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlation using Statistical Quality Control (SQC) methods. Limits are used to calculate Average Outgoing Quality Level (AOQL).
(3) Typical numbers are at 25°C and represent the most likely parametric norm.
(4) Refer to BOM in Table 1.

6.6 Typical Characteristics

Unless otherwise specified, the following conditions apply: VIN = 12 V; CIN = three × 10 μF + 47-nF X7R Ceramic; COUT = two × 330-μF Specialty Polymer + 47-µF Ceramic + 47-nF Ceramic; CFF = 4.7 nF; TA = 25° C for waveforms. All indicated temperatures are ambient.
LMZ12008 30155734.gif
Figure 1. Efficiency 5-V Output at 25°C
LMZ12008 30155736.gif
Figure 3. Efficiency 3.3-V Output at 25°C
LMZ12008 30155738.gif
Figure 5. Efficiency 2.5-V Output at 25°C
LMZ12008 30155740.gif
Figure 7. Efficiency 1.8-V Output at 25°C
LMZ12008 30155742.gif
Figure 9. Efficiency 1.5-V Output at 25°C
LMZ12008 30155744.gif
Figure 11. Efficiency 1.2-V Output at 25°C
LMZ12008 30155746.gif
Figure 13. Efficiency 1-V Output at 25°C
LMZ12008 30155748.gif
Figure 15. Efficiency 5-V Output at 85°C
LMZ12008 30155750.gif
Figure 17. Efficiency 3.3-V Output at 85°C
LMZ12008 30155752.gif
Figure 19. Efficiency 2.5-V Output at 85°C
LMZ12008 30155754.gif
Figure 21. Efficiency 1.8-V Output at 85°C
LMZ12008 30155756.gif
Figure 23. Efficiency 1.5-V Output at 85°C
LMZ12008 30155758.gif
Figure 25. Efficiency 1.2-V Output at 85°C
LMZ12008 30155760.gif
Figure 27. Efficiency 1-V Output at 85°C
LMZ12008 30155762.gif
VOUT = 3.3 V
Figure 29. Normalized Line and Load Regulation
LMZ12008 30155764.gif
VIN = 12 V, VOUT = 3.3 V
Figure 31. Thermal Derating
LMZ12008 30155766.png
12 VIN, 5 VOUT at Full Load, BW = 20 MHz
Figure 33. Output Ripple
LMZ12008 30155767.png
12 VIN, 3.3 VOUT at Full Load, BW = 20 MHz
Figure 35. Output Ripple
LMZ12008 30155768.png
12 VIN, 1.2 VOUT at Full Load, BW = 20 MHz
Figure 37. Output Ripple
LMZ12008 30155772.png
12 VIN, 5 VOUT 1- to 8-A Step
Figure 39. Transient Response
LMZ12008 30155774.gif
12 VIN, 1.2 VOUT 1- to 8-A Step
Figure 41. Transient Response
LMZ12008 30155776.png
No CSS
Figure 43. 3.3 VOUT Soft-Start
LMZ12008 30155735.gif
Figure 2. Dissipation 5-V Output at 25°C
LMZ12008 30155737.gif
Figure 4. Dissipation 3.3-V Output at 25°C
LMZ12008 30155739.gif
Figure 6. Dissipation 2.5-V Output at 25°C
LMZ12008 30155741.gif
Figure 8. Dissipation 1.8-V Output at 25°C
LMZ12008 30155743.gif
Figure 10. Dissipation 1.5-V Output at 25°C
LMZ12008 30155745.gif
Figure 12. Dissipation 1.2-V Output at 25°C
LMZ12008 30155747.gif
Figure 14. Dissipation 1-V Output at 25°C
LMZ12008 30155749.gif
Figure 16. Dissipation 5-V Output at 85°C
LMZ12008 30155751.gif
Figure 18. Dissipation 3.3-V Output at 85°C
LMZ12008 30155753.gif
Figure 20. Dissipation 2.5-V Output at 85°C
LMZ12008 30155755.gif
Figure 22. Dissipation 1.8-V Output at 85°C
LMZ12008 30155757.gif
Figure 24. Dissipation 1.5-V Output at 85°C
LMZ12008 30155759.gif
Figure 26. Dissipation 1.2-V Output at 85°C
LMZ12008 30155761.gif
Figure 28. Dissipation 1-V Output at 85°C
LMZ12008 30155763.gif
VIN = 12 V, VOUT = 5 V
Figure 30. Thermal Derating
LMZ12008 30155765.gif
Figure 32. θJA vs Copper Heat Sinking Area
LMZ12008 30155769.png
12 VIN, 5 VOUT at Full Load, BW = 250 MHz
Figure 34. Output Ripple
LMZ12008 30155770.png
12 VIN, 3.3 VOUT at Full Load, BW = 250 MHz
Figure 36. Output Ripple
LMZ12008 30155771.png
12 VIN, 1.2 VOUT at Full Load, BW = 250 MHz
Figure 38. Output Ripple
LMZ12008 30155773.png
12 VIN, 3.3 VOUT 1- to 8-A Step
Figure 40. Transient Response
LMZ12008 30155775.gif
Figure 42. Short Circuit Current vs Input Voltage
LMZ12008 301557a4.png
CSS = 0.47 µF
Figure 44. 3.3 VOUT Soft-Start