SNOS510Q November   1999  – October 2016 LP2985LV-N

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Multiple Voltage Options
      2. 7.3.2 Output Voltage Accuracy
      3. 7.3.3 Ultra-Low-Dropout Voltage
      4. 7.3.4 Low Ground Current
      5. 7.3.5 Sleep Mode
      6. 7.3.6 Internal Protection Circuitry
        1. 7.3.6.1 Short Circuit Protection (Current Limit)
        2. 7.3.6.2 Thermal Protection
      7. 7.3.7 Enhanced Stability
      8. 7.3.8 Low Noise
    4. 7.4 Device Functional Modes
      1. 7.4.1 Operation with VOUT(TARGET) + 0.6 V ≥ VIN > 16 V
      2. 7.4.2 Operation With ON/OFF Control
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 External Capacitors
          1. 8.2.2.1.1 Input Capacitor
          2. 8.2.2.1.2 Output Capacitor
          3. 8.2.2.1.3 Noise Bypass Capacitor
        2. 8.2.2.2 Capacitor Characteristics
          1. 8.2.2.2.1 Tantalum
        3. 8.2.2.3 On/OFF Input Operation
        4. 8.2.2.4 Reverse Input-Output Voltage
        5. 8.2.2.5 Power Dissipation
        6. 8.2.2.6 Estimating Junction Temperature
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 DSBGA Mounting
    4. 10.4 DSBGA Light Sensitivity
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
      2. 11.1.2 Receiving Notification of Documentation Updates
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
Input supply voltage –0.3 16 V
Shutdown input voltage –0.3 16 V
Power dissipation(3) Internally Limited
Output voltage(4) –0.3 9 V
IOUT Short-circuit protected
Input-output voltage(5) –0.3 16 V
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, contact the Texas Instruments Sales Office/ Distributors for availability and specifications.
(3) The maximum allowable power dissipation is a function of the maximum junction temperature, TJ_MAX, the junction-to-ambient thermal resistance, RθJA, and the ambient temperature, TA. The maximum allowable power dissipation at any ambient temperature is calculated using:
LP2985LV-N footnoteequation.gif
Where the value of RθJA for the SOT-23 package is 175.7°C/W in a typical PC board mounting or 178.8°C/W for YPB-type DSBGA package.
Exceeding the maximum allowable dissipation causes excessive die temperature, and the regulator goes into thermal shutdown.
(4) If used in a dual-supply system where the regulator load is returned to a negative supply, the LP2985LV-N output must be diode-clamped to GND.
(5) The output PNP structure contains a diode between the IN to OUT pins that is normally reverse-biased. Reversing the polarity from IN to OUT turns on this diode.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) Pins 3 and 4 (SOT-23)
Pins A3 and B2 (DSBGA)		 ±1000 V
Pins 1, 2, and 5 (SOT-23)
Pins A1, C1, and C3 (DSBGA)		 ±2000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VIN Supply input voltage 2.2(1) 16 V
VON/OFF ON/OFF input voltage 0 VIN V
IOUT Output current 150 mA
TJ Operating junction temperature –40 125 °C
(1) Recommended minimum VIN is the greater of 2.2 V or VOUT(MAX) + rated dropout voltage (maximum) for operating load current.

6.4 Thermal Information

THERMAL METRIC(1) LP2985LV-N UNIT
SOT-23 (DBV) DSBGA (YPB)
5 PINS
RθJA(2) Junction-to-ambient thermal resistance 175.7 178.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 78 2.1 °C/W
RθJB Junction-to-board thermal resistance 30.8 146.3 °C/W
ψJT Junction-to-top characterization parameter 2.8 1.9 °C/W
ψJB Junction-to-board characterization parameter 30.3 146.3 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
(2) Thermal resistance value RθJA is based on the EIA/JEDEC High-K printed circuit board defined by: JESD51-7 - High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages.

6.5 Electrical Characteristics

Unless otherwise specified: VIN = VO(NOM) + 1 V, IL = 1 mA, CIN = 1 µF, COUT = 4.7 µF, VON/OFF = 2 V, TJ = 25°C.(1)
PARAMETER TEST CONDITIONS LP2985AI-XX(2) LP2985I-XX(2) UNIT
MIN TYP MAX MIN TYP MAX
ΔVO Output voltage tolerance IL = 1 mA −1 1 −1.5 1.5 %VNOM
1 mA < IL < 50 mA −1.5 1.5 −2.5 2.5
1 mA < IL < 50 mA
–40°C ≤ TJ ≤ 125°C		 −2.5 2.5 −3.5 3.5
1 mA < IL < 150 mA −2.5 2.5 −3 3
1 mA < IL < 150 mA
–40°C ≤ TJ ≤ 125°C		 −3.5 3.5 −4 4
ΔVO/ΔVIN Output voltage line regulation VO(NOM) + 1 V ≤ VIN ≤ 16 V 0.007 0.014 0.007 0.014 %/V
VO(NOM) + 1 V ≤ VIN ≤ 16 V
–40°C ≤ TJ ≤ 125°C		 0.032 0.032
VIN(MIN) Minimum input voltage required to maintain output regulation(3) 2.05 2.05 V
–40°C ≤ TJ ≤ 125°C 2.2 2.2
VIN – VOUT Dropout voltage(3) IL = 50 mA 120 150 120 150 mV
IL = 50 mA, –40°C ≤ TJ ≤ 125°C 250 250
IL = 150 mA 280 350 280 350
IL = 150 mA, –40°C ≤ TJ ≤ 125°C 600 600
IGND Ground pin current IL = 0 mA 65 95 65 95 μA
IL = 0 mA, –40°C ≤ TJ ≤ 125°C 125 125
IL = 1 mA 75 110 75 110
IL = 1 mA, –40°C ≤ TJ ≤ 125°C 170 170
IL = 10 mA 120 220 120 220
IL = 10 mA, –40°C ≤ TJ ≤ 125°C 400 400
IL = 50 mA 300 500 300 500
IL = 50 mA, –40°C ≤ TJ ≤ 125°C 900 900
IL = 150 mA 825 1200 825 1200
IL = 150 mA, –40°C ≤ TJ ≤ 125°C 2000 2000
VON/OFF < 0.3 V 0.01 0.8 0.01 0.8
VON/OFF < 0.15 V
–40°C ≤ TJ ≤ 125°C		 0.05 2 0.05 2
VON/OFF ON/OFF input voltage(4) High = O/P ON 1.4 1.4 V
High = O/P ON
–40°C ≤ TJ ≤ 125°C		 1.6 1.6
Low = O/P OFF 0.55 0.55
Low = O/P OFF
–40°C ≤ TJ ≤ 125°C		 0.15 0.15
ION/OFF ON/OFF input current VON/OFF = 0 V 0.01 0.01 μA
VON/OFF = 0 V
–40°C ≤ TJ ≤ 125°C		 –2 –2
VON/OFF = 5 V 5 5
VON/OFF = 5 V
–40°C ≤ TJ ≤ 125°C		 15 15
IO(PK) Peak output current VOUT ≥ VO(NOM) − 5% 350 350 mA
en Output noise voltage BW = 300 Hz to 50 kHz
COUT = 10 μF
CBYPASS = 10 nF, VOUT = 1.8 V		 30 30 μV(RMS)
ΔVO/ΔVIN Ripple rejection ƒ = 1 kHz, COUT = 10 μF
CBYPASS = 10 nF		 45 45 dB
IO(SC) Short-circuit current RL = 0 Ω (steady state)(5) 400 400 mA
(1) Exposing the DSBGA device to direct sunlight causes misoperation. See Layout for additional information.
(2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlation using statistical quality control (SQC) methods. The limits are used to calculate average outgoing quality level (AOQL).
(3) VIN must be the greater of 2.2 V or VOUT(NOM) + dropout voltage to maintain output regulation. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below the value measured with a 1-V differential.
(4) The ON/OFF inputs must be properly driven to prevent misoperation. For details, see Operation With ON/OFF Control.
(5) The LP2985LV-N has foldback current limiting, which allows a high peak current when VOUT > 0.5 V and then reduces the maximum output current as VOUT is forced to ground (see related curve(s) in Typical Characteristics).

6.6 Typical Characteristics

Unless otherwise specified: CIN = 1 µF, COUT = 4. 7µF, VIN = VOUT(NOM) + 1, VOUT = 1.8 V, TA = 25°C, ON/OFF pin is tied to VIN.
LP2985LV-N 10129507.png Figure 1. VOUT vs Temperature
LP2985LV-N 10129517.png
Figure 3. Short-Circuit Current
LP2985LV-N 10129525.png
COUT = 4.7 µF Bypass = 10 nF
Figure 5. Ripple Rejection
LP2985LV-N 10129527.png Figure 7. Output Impedance vs Frequency
LP2985LV-N 10129533.png Figure 9. Noise Density
LP2985LV-N 10129513.png Figure 11. Ground Pin vs Load Current
LP2985LV-N 10129541.png Figure 13. Minimum Input Voltage vs Temperature
LP2985LV-N 10129511.png Figure 15. Input Current vs VIN
LP2985LV-N 10129514.png Figure 17. Ground Pin Current vs Temperature
LP2985LV-N 10129508.png Figure 19. Output Characteristics
LP2985LV-N 10129516.png
Figure 2. Short-Circuit Current
LP2985LV-N 10129518.png Figure 4. Short-Circuit Current vs Output Voltage
LP2985LV-N 10129526.png
COUT = 4.7 µF No Bypass
Figure 6. Ripple Rejection
LP2985LV-N 10129532.png Figure 8. Output Impedance vs Frequency
LP2985LV-N 10129537.png Figure 10. Noise Density
LP2985LV-N 10129509.png Figure 12. Minimum Input Voltage vs Temperature
LP2985LV-N 10129510.png Figure 14. Input Current vs VIN
LP2985LV-N 10129512.png Figure 16. Input Current vs VIN
LP2985LV-N 10129515.png Figure 18. Instantaneous Short Circuit Current