SLAS645L July 2009 – May 2020 MSP430F5500 , MSP430F5501 , MSP430F5502 , MSP430F5503 , MSP430F5504 , MSP430F5505 , MSP430F5506 , MSP430F5507 , MSP430F5508 , MSP430F5509 , MSP430F5510
PRODUCTION DATA.
| PARAMETER | TJ | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| DVCC(PGM/ERASE) | Program and erase supply voltage | 1.8 | 3.6 | V | ||
| tREADMARGIN | Read access time during marginal mode | 200 | ns | |||
| IPGM | Supply current from DVCC during program | 3 | 5 | mA | ||
| IERASE | Supply current from DVCC during erase | 2 | 6.5 | mA | ||
| IMERASE, IBANK | Supply current from DVCC during mass erase or bank erase | 2 | 6.5 | mA | ||
| tCPT | Cumulative program time(1) | 16 | ms | |||
| Program and erase endurance | 104 | 105 | cycles | |||
| tRetention | Data retention duration | 25°C | 100 | years | ||
| tWord | Word or byte program time(2) | 64 | 85 | µs | ||
| tBlock, 0 | Block program time for first byte or word(2) | 49 | 65 | µs | ||
| tBlock, 1–(N–1) | Block program time for each additional byte or word, except for last byte or word(2) | 37 | 49 | µs | ||
| tBlock, N | Block program time for last byte or word(2) | 55 | 73 | µs | ||
| tErase | Erase time for segment, mass erase, and bank erase when available(2) | 23 | 32 | ms | ||