SLASF90C October   2023  – February 2025 MSPM0C1103 , MSPM0C1104

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Functional Block Diagram
  6. 5 Device Comparison
  7. 6 Pin Configuration and Functions
    1. 6.1 Pin Diagrams
    2. 6.2 Pin Attributes
    3. 6.3 Signal Descriptions
    4. 6.4 Connections for Unused Pins
  8. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Supply Current Characteristics
      1. 7.5.1 RUN/SLEEP Modes
      2. 7.5.2 STOP/STANDBY Modes
      3. 7.5.3 SHUTDOWN Mode
    6. 7.6  Power Supply Sequencing
      1. 7.6.1 POR and BOR
      2. 7.6.2 Power Supply Ramp
    7. 7.7  Flash Memory Characteristics
    8. 7.8  Timing Characteristics
    9. 7.9  Clock Specifications
      1. 7.9.1 System Oscillator (SYSOSC)
      2. 7.9.2 Low Frequency Oscillator (LFOSC)
    10. 7.10 Digital IO
      1. 7.10.1  Electrical Characteristics
      2. 7.10.2 Switching Characteristics
    11. 7.11 ADC
      1. 7.11.1 Electrical Characteristics
      2. 7.11.2 Switching Characteristics
      3. 7.11.3 Linearity Parameters
      4. 7.11.4 Typical Connection Diagram
    12. 7.12 Temperature Sensor
    13. 7.13 VREF
      1. 7.13.1 Voltage Characteristics
      2. 7.13.2 Electrical Characteristics
    14. 7.14 I2C
      1. 7.14.1 I2C Characteristics
      2. 7.14.2 I2C Filter
      3. 7.14.3 I2C Timing Diagram
    15. 7.15 SPI
      1. 7.15.1 SPI
      2. 7.15.2 SPI Timing Diagrams
    16. 7.16 UART
    17. 7.17 TIMx
    18. 7.18 Windowed Watchdog Characteristics
    19. 7.19 Emulation and Debug
      1. 7.19.1 SWD Timing
  9. 8 Detailed Description
    1. 8.1  CPU
    2. 8.2  Operating Modes
      1. 8.2.1 Functionality by Operating Mode (MSPM0C110x)
    3. 8.3  Power Management Unit (PMU)
    4. 8.4  Clock Module (CKM)
    5. 8.5  DMA
    6. 8.6  Events
    7. 8.7  Memory
      1. 8.7.1 Memory Organization
      2. 8.7.2 Peripheral File Map
      3. 8.7.3 Peripheral Interrupt Vector
    8. 8.8  Flash Memory
    9. 8.9  SRAM
    10. 8.10 GPIO
    11. 8.11 IOMUX
    12. 8.12 ADC
    13. 8.13 Temperature Sensor
    14. 8.14 VREF
    15. 8.15 CRC
    16. 8.16 UART
    17. 8.17 SPI
    18. 8.18 I2C
    19. 8.19 WWDT
    20. 8.20 Timers (TIMx)
    21. 8.21 Device Analog Connections
    22. 8.22 Input/Output Diagrams
    23. 8.23 Serial Wire Debug Interface
    24. 8.24 Device Factory Constants
    25. 8.25 Identification
  10. 9 Applications, Implementation, and Layout
    1. 9.1 Typical Application
      1. 9.1.1 Schematic
  11. 10Device and Documentation Support
    1. 10.1 Device Nomenclature
    2. 10.2 Tools and Software
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DYY|16
  • DDF|8
  • RUK|20
  • DGS|20
  • DSG|8
  • PW|20
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.7 Flash Memory Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Supply
VDDPGM/ERASE Program and erase supply voltage 1.62 3.6 V
IDDERASE Supply current from VDD during erase operation Supply current delta 2 mA
IDDPGM Supply current from VDD during program operation Supply current delta 2.5 mA
Endurance
NWEC(LOWER) Erase/program cycle endurance   100 k cycles
NE(MAX) Total erase operations before failure (1) 802 k erase operations
NW(MAX) Write operations per word line before sector erase (1) 83 write operations
Retention
tRET_85 Flash memory data retention -40°C <= Tj <= 85°C 60 years
tRET_105 Flash memory data retention -40°C <= Tj <= 105°C 11.4 years
tRET_130 Flash memory data retention  -40°C <= Tj <= 130°C 2.4 years
Program and Erase Timing
tPROG (WORD, 64) Program time for flash word (2) 40 µs
tPROG (SEC, 64) Program time for 1kB sector 5.1 ms
tERASE (SEC) Sector erase time <10k erase/program cycles 20 200 ms
tERASE (BANK) Bank erase time <10k erase/program cycles 22 220 ms
(1) Maximum number of write operations allowed per word line before the word line must be erased. If additional writes to the same word line are required, a sector erase is required once the maximum number of write operations per word line is reached.
(2) Sector program time is defined as the time from when the first word program command is triggered until the final word program command completes and the interrupt flag is set in the flash controller.  This time includes the time needed for software to load each flash word (after the first flash word) into the flash controller during programming of the sector.