SBVS046E December   2003  – April 2026 REF31

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Supply Voltage
      2. 7.3.2 Thermal Hysteresis
      3. 7.3.3 Temperature Drift
      4. 7.3.4 Noise Performance
      5. 7.3.5 Long-Term Stability
      6. 7.3.6 Load Regulation
    4. 7.4 Device Functional Modes
      1. 7.4.1 Negative Reference Voltage
      2. 7.4.2 Data Acquisition
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.1 Overview

The REF31xx is a family of series, CMOS, precision bandgap voltage references. The basic bandgap topology is shown in Section 7.2. Transistors Q1 and Q2 are biased such that the current density of Q1 is greater than that of Q2. The difference of the two base-emitter voltages, Vbe1 – Vbe2, has a positive temperature coefficient and is forced across resistor R1. This voltage is gained up and added to the base-emitter voltage of Q2, which has a negative temperature coefficient. The resulting output voltage is virtually independent of temperature. The curvature of the bandgap voltage, as shown in Figure 6-3, is due to the slightly nonlinear temperature coefficient of the base-emitter voltage of Q2.