SLOS981 October   2019 TLV6003

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      PIR Motion Detector Buffer
      2.      Offset Voltage vs Temperature
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information – TLV6003
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Reverse-Battery Protection
      2. 7.3.2 Common-Mode Input Range
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Drive a Capacitive Load
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Community Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.3.1 Reverse-Battery Protection

The TLV6003 is protected against reverse-battery voltage up to 18 V. When subjected to reverse-battery conditions, the supply current is typically 50 nA at 25°C (inputs grounded and outputs open). This current is determined by the leakage of internal Schottky diodes, and therefore increases as the ambient temperature increases.

When subjected to reverse-battery conditions, and negative voltages are applied to the inputs or outputs, the input ESD structure conducts current; limit this current to less than 10 mA. If the inputs or outputs are referred to ground rather than midrail, no extra precautions are required.