SBVS320C November   2017  – March 2024 TLV755P

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Undervoltage Lockout (UVLO)
      2. 6.3.2 Enable (EN)
      3. 6.3.3 Internal Foldback Current Limit
      4. 6.3.4 Thermal Shutdown
    4. 6.4 Device Functional Modes
      1. 6.4.1 Normal Operation
      2. 6.4.2 Dropout Operation
      3. 6.4.3 Disabled
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Input and Output Capacitor Selection
      2. 7.1.2 Dropout Voltage
      3. 7.1.3 Exiting Dropout
      4. 7.1.4 Reverse Current
      5. 7.1.5 Power Dissipation (PD)
        1. 7.1.5.1 Estimating Junction Temperature
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Input Current
        2. 7.2.2.2 Thermal Dissipation
      3. 7.2.3 Application Curve
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Examples
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Device Nomenclature
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DYD|5
  • DBV|5
  • DQN|4
  • DRV|6
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.1.2 Dropout Voltage

The TLV755P uses a PMOS pass transistor to achieve low dropout. When (VIN – VOUT) is less than the dropout voltage (VDO), the PMOS pass transistor is in the linear region of operation and the input-to-output resistance is the RDS(ON) of the PMOS pass transistor. VDO scales linearly with the output current because the PMOS transistor functions like a resistor in dropout mode. As with any linear regulator, PSRR and transient response degrade as (VIN – VOUT) approaches dropout operation. See Figure 5-13 and Figure 5-14 for typical dropout values.