SLVSBQ6B December 2012 – September 2015 TPD5E003
PRODUCTION DATA.
MIN | MAX | UNIT | |
---|---|---|---|
I/O voltage tolerance | 5.5 | V | |
Peak pulse current (tp = 8/20 μs), IPP | 3 | A | |
Peak pulse power (tp = 8/20 μs), PPP | 40 | W | |
Storage temperature, Tstg | –55 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±4000 | V |
Charged device model (CDM), per JEDEC specification JESD22-C101(2) | ±1500 |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | IEC 61000-4-2 contact discharge | ±15000 | V |
IEC 61000-4-2 air-gap discharge | ±15000 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
Operating free-air temperature, TA | –40 | 125 | °C | ||
Operating voltage | Pin 1, 3, 4, 5, 6 to Pin 2 | 0 | 5 | V |
THERMAL METRIC(1) | TPD5E003 | UNIT | |
---|---|---|---|
DPF (X2SON) | |||
6 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 246.7 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 87.8 | °C/W |
RθJB | Junction-to-board thermal resistance | 187.1 | °C/W |
ψJT | Junction-to-top characterization parameter | 2.6 | °C/W |
ψJB | Junction-to-board characterization parameter | 198 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 32 | °C/W |
PARAMETER | TEST CONDITION | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VRWM | Reverse stand-off voltage | II = 0.1 µA | 5 | V | ||
ILEAK | Leakage Current | Pin 1, 3, 4, 5, or 6 = 5 V, Pin 2 = 0 V | 10 | 100 | nA | |
VCLAMP | Clamp voltage with ESD strike | IPP = 6 A, TLP, Dx pin to GND, TA = 25 °C | 13 | 15.6 | V | |
IPP = 10 A, TLP, Dx pin to GND, TA = 25 °C | 16.3 | 19.5 | V | |||
RDYN | Dynamic resistance | ITLP = 6 A to 10 A, Dx pin to GND, TA = 25 °C | 0.8 | 1 | Ω | |
ITLP = 6 A to 10 A, GND to Dx pin, TA = 25 °C | 0.3 | 0.4 | Ω | |||
CIO | IO capacitance | VIO = 2.5 V, 1 MHz, TA = 25 °C | 5.6 | 7 | 8.4 | pF |
VIO = 0 V, 1 MHz, TA = 25 °C | 8 | 10 | 12 | pF | ||
VBR | Break-down voltage | IIO = 1 mA | 6 | 7 | 8.5 | V |