SLVSHX5A July 2025 – December 2025 TPS2HC08-Q1
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
When switching an inductive load off, the inductive reactance tends to pull the output voltage negative. Excessive negative voltage can cause the power FET to break down. To protect the power FET, an internal clamp between drain and source is implemented, namely VDS(clamp).

During the period of demagnetization (tdecay), the power FET is turned on for inductance-energy dissipation. The total energy is dissipated in the high-side switch. Total energy includes the energy of the power supply (E(VS)) and the energy of the load (E(load)). If resistance is in series with inductance, some of the load energy is dissipated on the resistance.

When an inductive load switches off, E(HSS) causes high thermal stressing on the device.. The upper limit of the power dissipation depends on the device intrinsic capacity, ambient temperature, and board dissipation condition.
Figure 8-24 Drain-to-Source Clamping Structure
Figure 8-25 Inductive Load Switching-Off DiagramFrom the perspective of the high-side switch, E(HSS) equals the integration value during the demagnetization period.

When R approximately equals 0, E(HSD) can be given simply as:

Note that for PWM-controlled inductive loads, adding the external freewheeling circuitry as shown below is recommended to protect the device from repetitive power stressing. TVS is used to achieve the fast decay.
Figure 8-26 Protection with External CircuitryFigure 8-27 shows the VDS clamp engaging during 5mH inductive load discharge. Figure 8-28 and Figure 8-29 shows maximum energy dissipation capability of the device during inductive load turn off.