SLVSGY2 October   2023 TPS2HCS10-Q1

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
    1. 5.1 Recommended Connections for Unused Pins
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SPI Timing Requirements
    7. 6.7 Switching Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Protection Mechanisms
        1. 8.3.1.1 Programmable Fuse Protection
        2. 8.3.1.2 Thermal Shutdown
        3. 8.3.1.3 Overcurrent Protection And Capacitive Load Charging
        4. 8.3.1.4 Reverse Battery
      2. 8.3.2 Diagnostic Mechanisms
        1. 8.3.2.1 VOUT Short-to-Battery and Open-Load
          1. 8.3.2.1.1 Detection With Channel Output (FET) Enabled
          2. 8.3.2.1.2 Detection With Channel Output Disabled
        2. 8.3.2.2 Digital Current Sense Output
          1. 8.3.2.2.1 RSNS Value and Accuracy / Resolution of Current Measurement
            1. 8.3.2.2.1.1 High Accuracy Load Current Sense
            2. 8.3.2.2.1.2 SNS Output Filter
        3. 8.3.2.3 Output Voltage and FET Temperature Sensing
    4. 8.4 Device Functional Modes
      1. 8.4.1 State Diagram
      2. 8.4.2 SLEEP
      3. 8.4.3 CONFIG/ACTIVE
      4. 8.4.4 Battery Supply Input (VBB) Under-voltage
      5. 8.4.5 LOW POWER MODE (LPM) State
      6. 8.4.6 LIMP HOME state
      7. 8.4.7 SPI Mode Operation
    5. 8.5 TPS2HC10S Registers
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Thermal Considerations
        2. 9.2.2.2 Configuring the Capacitive Charging Mode
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • PWP|16
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.2.2.1 Thermal Considerations

The output voltage ramps while the load capacitance is being charged. During this period, the power dissipation in the FET is high due to the large drain-to-source voltage. The power dissipation and the resultant increase in the silicon junction temperature limits the capacitance that can be charged before the device hits thermal shutdown. In general, lower the charging rate (current), the higher the value of capacitance that can be charged. But if a lower charging current is used, the charging time will be higher. In the application cases considered here, it is expected that the FET junction temperature will not reach the thermal shutdown threshold.