11 Device and Documentation Support
11.1 Device Support
11.1.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
11.1.2 Device Nomenclature
VIN(min) Minimum operating input voltage
VIN(max) Maximum operating input voltage
IRIPPLE Inductor peak-peak ripple current
ITRAN(max) Maximum load transient
VUNDER Output voltage undershot
VOVER Output voltage overshot
VRIPPLE(totOUT) Total output ripple
VRIPPLE(COUT) Output voltage ripple due to output capacitance
VRIPPLE(CIN) Input voltage ripple due to input capacitance
VRIPPLE(CinESR) Input voltage ripple due to the ESR of input capacitance
PSW(cond) High side MOSFET switching loss
ISWrms RMS current in the high side MOSFET
RDS(on)(SW) ON drain-source resistance of the high side MOSFET
PSW(sw) High side MOSFET switching loss
IPK Peak current through the high side MOSFET
RDRV Driver resistance of the high side MOSFET
QgdSW Gate to drain charge of the high side MOSFET
QgsSW Gate to source charge of the high side MOSFET
VGSW Gate drive voltage of the high side MOSFET
PSW(gate) Gate drive loss of the high side MOSFET
QgSW Gate charge of the high side MOSFET
PSW(tot) Total losses of the high side MOSFET
PSR(cond) Low side MOSFET conduction loss
ISRrms RMS current in the low side MOSFET
RDS(on)(SR) ON drain-source resistance of the low side MOSFET
PSR(gate) Gate drive loss of the low side MOSFET
QgSR Gate charge of the low side MOSFET
VgSR Gate drive voltage of the low side MOSFET
PDIODE Power loss in the diode
tD Dead time between the condiction of high and low side MOSFET
Vf Forward voltage drop of the body diode of the low side MOSFET
PSR(tot) Total losses of the low side MOSFET
DCR Inductor DC resistance
AC Gain of the current sensing amplifier, typically it is 13
ROUT Output load resistance
VRAMP Ramp amplitude, typically it is 0.5 V
GVC(s) Control to output transfer function
GC(s) Compensator transfer function
TV(s) Loop gain transfer function
ACM Gain of the compensator
fP The pole frequency of the compensator
fZ The zero frequency of the compensator
11.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document.
11.3 Community Resources
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11.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.