SLUSEE5D January   2022  – April 2024 TPS4811-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Charge Pump and Gate Driver output (VS, PU, PD, BST, SRC)
      2. 8.3.2  Capacitive Load Driving
        1. 8.3.2.1 FET Gate Slew Rate Control
        2. 8.3.2.2 Using Precharge FET - (with TPS48111-Q1 Only)
      3. 8.3.3  Short-Circuit Protection
        1. 8.3.3.1 Overcurrent Protection With Auto-Retry
        2. 8.3.3.2 Overcurrent Protection With Latch-Off
      4. 8.3.4  Short-Circuit Protection
      5. 8.3.5  Analog Current Monitor Output (IMON)
      6. 8.3.6  Overvoltage (OV) and Undervoltage Protection (UVLO)
      7. 8.3.7  Device Functional Mode (Shutdown Mode)
      8. 8.3.8  Remote Temperature sensing and Protection (DIODE)
      9. 8.3.9  Output Reverse Polarity Protection
      10. 8.3.10 TPS4811x-Q1 as a Simple Gate Driver
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application: Driving HVAC PTC Heater Load on KL40 Line in Power Distribution Unit
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Typical Application: Driving B2B FETs With Pre-charging the Output Capacitance
      1. 9.3.1 Design Requirements
      2. 9.3.2 External Component Selection
      3. 9.3.3 Application Curves
    4. 9.4 Power Supply Recommendations
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.3.3.1 Overcurrent Protection With Auto-Retry

The CTMR programs the over current protection delay (tOC) and auto-retry time (tRETRY). Once the voltage across CS+ and CS– exceeds the set point, the CTMR starts charging with 80-µA pull-up current. After the CTMR charges up to V(TMR_FLT), FLT asserts low providing warning on impending FET turn OFF. After CTMR charges to V(TMR_OC), PD pulls low to SRC turning OFF the FET. Post this event, the auto-retry behavior starts. The CTMR capacitor starts discharging with 2.5-uA pulldown current. After the voltage reaches V(TMR_LOW) level, the capacitor starts charging with 2.5-uA pullup. After 32 charging-discharging cycles of CTMR the FET turns ON back and FLT de-asserts

Use Equation 7 to calculate the CTMR capacitor to be connected across TMR and GND.

Equation 7. CTMR=ITMR × tOC1.2

Where, ITMR is internal pull-up current of 80-µA, tOC is desired overcurrent response time.

The fastest tOC is < 6 µs with no CTMR cap connected.

tRETRY = 22.7 × 106 × CTMR

If the overcurrent pulse duration is below tOC then the FET remains ON and CTMR gets discharged using internal pull down switch.

GUID-20230127-SS0I-VBNM-TGCQ-ZRGXDZWQ0WD6-low.svgFigure 8-9 Overcurrent Protection With Auto-Retry