SLVSDD1G December 2017 – June 2024 TPS62800 , TPS62801 , TPS62802 , TPS62806 , TPS62807 , TPS62808
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY | ||||||
| IQ | Operating quiescent current (power save mode) |
EN
= VIN, IOUT = 0 µA, VOUT = 1.2
V, device not switching, TJ = –40°C to +85°C |
2.3 | 4 | µA | |
| EN = VIN, IOUT = 0 µA, VOUT = 1.2 V, device switching | 2.5 | µA | ||||
| Operating quiescent current (PWM mode) | EN
= VIN, VSEL/MODE = VIN (after power up), device switching, IOUT = 0 mA, VOUT = 1.2 V |
8 | mA | |||
| ISD | Shutdown current | EN
= GND, shutdown current into VIN, VSEL/MODE = GND, TJ = –40°C to +85°C |
120 | 250 | nA | |
| VTH_UVLO+ | Undervoltage lockout threshold | Rising VIN | 1.65 | 1.75 | V | |
| VTH_UVLO– | Falling VIN | 1.56 | 1.7 | V | ||
| INPUT EN | ||||||
| VIH TH | High level input voltage | 0.8 | V | |||
| VIL TH | Low level input voltage | 0.4 | V | |||
| IIN | Input bias current | TJ = –40°C to +85°C, EN = high | 10 | 25 | nA | |
| RPD | Internal pulldown resistance | EN = low | 500 | kΩ | ||
| INPUT VSEL/MODE | ||||||
| VIH TH | High level input voltage (digital input) | 0.8 | V | |||
| VIL TH | Low level input voltage (digital input) | 0.4 | V | |||
| IIN | Input bias current | EN = high | 10 | 25 | nA | |
| POWER SWITCHES | ||||||
| ILKG_SW | Leakage current into the SW pin | VSW = 1.2 V, TJ = –40°C to +85°C | 10 | 25 | nA | |
| RDS(ON) | High side MOSFET on-resistance |
IOUT = 500 mA | 120 | 170 | mΩ | |
| Low side MOSFET on-resistance |
IOUT = 500 mA | 80 | 115 | mΩ | ||
| ILIMF | High-side MOSFET switch current limit | TPS62806, TPS62807, TPS62808 | 0.95 | 1.1 | 1.2 | A |
| ILIMF | Low-side MOSFET switch current limit | TPS62806, TPS62807, TPS62808 | 0.85 | 1 | 1.1 | A |
| ILIMF | High-side MOSFET switch current limit | TPS62800, TPS62801 | 1.3 | 1.45 | 1.55 | A |
| TPS62802 | 1.4 | 1.55 | 1.65 | A | ||
| ILIMF | Low-side MOSFET switch current limit | TPS62800, TPS62801 | 1.2 | 1.35 | 1.45 | A |
| TPS62802 | 1.3 | 1.45 | 1.55 | A | ||
| OUTPUT VOLTAGE DISCHARGE | ||||||
| RDSCH_VOS | MOSFET on-resistance | EN
= GND, IVOS = –10 mA into the VOS pin TJ = –40°C to +85°C |
7 | 11 | Ω | |
| IIN_VOS | Bias current into the VOS pin | EN = VIN, VOUT = 1.2 V (internal 12-MΩ resistor divider), TJ = –40°C to +85°C | 100 | 400 | nA | |
| THERMAL PROTECTION | ||||||
| TSD | Thermal shutdown temperature | Rising junction temperature, PWM mode | 160 | °C | ||
| Thermal shutdown hysteresis | 20 | °C | ||||
| OUTPUT | ||||||
| VOUT | Output voltage range | TPS62800, TPS62806, 25-mV steps | 0.4 | 0.775 | V | |
| VOUT | Output voltage range | TPS62801, TPS62807, 50-mV steps | 0.8 | 1.55 | V | |
| VOUT | Output voltage range | TPS62802, TPS62808, 100-mV steps | 1.8 | 3.3 | V | |
| VOUT | Output voltage accuracy | Power save mode | 0% | |||
| VOUT | Output voltage accuracy | PWM mode, IOUT = 0 mA, TJ = 25°C to +85°C | –1% | 0% | 1% | |
| VOUT | Output voltage accuracy | PWM mode, IOUT = 0 mA, TJ = –40°C to +125°C | –2% | 0% | 1.7% | |
| fSW | Switching frequency | VIN = 3.6 V, VOUT = 1.2 V, PWM operation | 4 | MHz | ||
| fSW | Switching frequency | TPS62806 VIN = 3.6 V, VOUT = 0.7 V, PWM operation |
1.5 | MHz | ||
| fSW | Switching frequency | TPS62807 VIN = 3.6 V, VOUT = 1.2 V, PWM operation |
1.5 | MHz | ||
| fSW | Switching frequency | TPS62808 VIN = 3.6 V, VOUT = 1.8 V, PWM operation |
1.5 | MHz | ||
| tStartup_delay | Regulator start-up delay time | From transition EN = low to high until device starts switching, VSEL = 16 | 500 | 1100 | µs | |
| tSS | Soft-start time | TPS62801, from VOUT = 0 V to 0.95% of VOUT nominal | 125 | 170 | µs | |
| tSS | Soft-start time | TPS62800,
TPS62806, TPS62807, TPS62808 from VOUT = 0 V to 0.95% of VOUT nominal |
125 | 210 | µs | |
| tSS | Soft-start time | TPS62802, from VOUT = 0 V to 0.95% of VOUT nominal | 400 | 500 | µs | |