SLVSEK4C July   2019  – February 2020 TPS63810 , TPS63811

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
      2.      Efficiency versus Output Current
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     BGA Package (YFF) Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Control Scheme
        1. 8.3.1.1 Buck Operation
        2. 8.3.1.2 Boost Operation
        3. 8.3.1.3 Buck-Boost Operation
      2. 8.3.2  Control Scheme
      3. 8.3.3  Power-Save Mode Operation (PSM)
      4. 8.3.4  Forced-PWM Operation (FPWM)
      5. 8.3.5  Ramp-PWM Operation (RPWM)
      6. 8.3.6  Device Enable (EN)
      7. 8.3.7  Undervoltage Lockout (UVLO)
      8. 8.3.8  Soft Start
      9. 8.3.9  Output Voltage Control
        1. 8.3.9.1 Dynamic Voltage Scaling
      10. 8.3.10 Protection Functions
        1. 8.3.10.1 Input Voltage Protection (IVP)
        2. 8.3.10.2 Current Limit Mode and Overcurrent Protection
        3. 8.3.10.3 Thermal Shutdown
      11. 8.3.11 Power Good
      12. 8.3.12 Load Disconnect
      13. 8.3.13 Output Discharge
    4. 8.4 Device Functional Modes
    5. 8.5 Programming
      1. 8.5.1 Serial Interface Description
      2. 8.5.2 Standard-, Fast-, and Fast-Mode Plus Protocol
      3. 8.5.3 I2C Update Sequence
    6. 8.6 Register Map
      1. 8.6.1 Register Description
        1. 8.6.1.1 Register Map
        2. 8.6.1.2 Register CONTROL (Slave address: 0b1110101; Register address: 0x01; Default: 0x00 or 0x20)
          1. Table 3. Register CONTROL Field Descriptions
        3. 8.6.1.3 Register STATUS (Slave address: 0b1110101; Register address: 0x02; Default: 0x00)
          1. Table 4. Register STATUS Field Descriptions
        4. 8.6.1.4 Register DEVID (Slave address: 0b1110101; Register address: 0x03; Default: 0x04)
          1. Table 5. Register DEVID Field Descriptions
        5. 8.6.1.5 Register VOUT1 (Slave address: 0b1110101; Register address: 0x04; Default: 0x3C)
          1. Table 6. Register VOUT1 Field Descriptions
        6. 8.6.1.6 Register VOUT2 (Slave address: 0b1110101; Register address: 0x05; Default: 0x42)
          1. Table 7. Register VOUT2 Field Descriptions
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 1.8-V to 5.2-V Output Smartphone Power Supply
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Input Capacitor Selection
          2. 9.2.1.2.2 Inductor Selection
          3. 9.2.1.2.3 Output Capacitor Selection
          4. 9.2.1.2.4 I2C Pullup Resistor Selection
        3. 9.2.1.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Related Links
    4. 12.4 Receiving Notification of Documentation Updates
    5. 12.5 Support Resources
    6. 12.6 Trademarks
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VI  Supply voltage 2.2 5.5 V
VO Output voltage Low range 1.8 4.975 V
High range 2.025 5.2
VIH High-level input voltage SCL, SDA, VSEL 1.3 VI V
VIL Low-level input voltage SCL, SDA, VSEL 0 0.3 V
V(EN) Input voltage EN 0 VI V
IO Output current(2) VO = 3.3 V, VI ≥ 2.5 V 2.5 A
VO = 3.5 V, VI ≥ 2.5 V 2
VO = 3.5 V, VI ≥ 2.8 V 2.5
VO = 3.3 V, VI ≥ 3 V 3
CI Input capacitance(1) 5 µF
CO Output capacitance(1) 13 16 µF
L Inductance 390 470 560 nH
TA Operating free-air temperature range –40 85 °C
TJ Operating junction temperature range –40 125 °C
(1) Effective capacitance after DC bias effects have been considered.
(2) The device can sustain the maximum recommended output current only for short durations before its junction temperature gets too hot. Users must verify that the thermal performance of the end application can support the maximum output current.