SLVSH42C June   2023  – October 2024 TSD05C , TSD12C , TSD15C , TSD18C , TSD24C , TSD36C

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Pin Configuration and Functions
  6. 5Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings—JEDEC Specification
    3. 5.3  ESD Ratings—IEC Specification
    4. 5.4  Recommended Operating Conditions
    5. 5.5  Thermal Information
    6. 5.6  Electrical Characteristics - TSD05C
    7. 5.7  Electrical Characteristics - TSD12C
    8. 5.8  Electrical Characteristics - TSD15C
    9. 5.9  Electrical Characteristics - TSD18C
    10. 5.10 Electrical Characteristics - TSD24C
    11. 5.11 Electrical Characteristics - TSD36C
    12. 5.12 Typical Characteristics
  7. 6Application and Implementation
    1. 6.1 Application Information
  8. 7Device and Documentation Support
    1. 7.1 Documentation Support
      1. 7.1.1 Related Documentation
    2. 7.2 Receiving Notification of Documentation Updates
    3. 7.3 Support Resources
    4. 7.4 Trademarks
    5. 7.5 Electrostatic Discharge Caution
    6. 7.6 Glossary
  9. 8Revision History
  10. 9Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.10 Electrical Characteristics - TSD24C

At TA=25℃ (unless otherwise noted) (1)
PARAMETER TEST CONDITION MIN TYP MAX UNIT
VRWM Reverse stand-off voltage IIO <10 nA, across operating temperature range 24 V
VBR Breakdown voltage IIO = 10 mA,  IO to GND and GND to IO 25.5 30.5 35.5 V
ILEAK Reverse leakage current VIO = 24 V, IO to GND or GND to IO 5 10 nA
VCLAMP Surge clamping voltage, tp = 8/20 µs  (2) IPP = 1 A, IO to GND or GND to IO 34 V
IPP = 5 A, IO to GND or GND to IO 43 V
IPP = 9 A, IO to GND or GND to IO 50 V
TLP clamping voltage, tp = 100 ns IPP = 16 A, IO to GND or GND to IO 36 V
RDYN Dynamic resistance(3) IO to GND 0.35 Ω
GND to IO
CL Line capacitance VIO = 0 V;  ƒ = 1 MHz, IO to GND 4.3 6 pF
(1) Typical parameters are measured at 25℃
(2) Nonrepetitive current pulse 8 to 20 µs exponentially decaying waveform according to IEC 61000-4-5
(3) Extraction of RDYN using least squares fit of TLP characteristics between I = 10 A and I = 20 A