SLUSCJ9E June   2016  – December 2021 UCC21520

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Description (continued)
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Power Ratings
    6. 7.6  Insulation Specifications
    7. 7.7  Safety-Related Certifications
    8. 7.8  Safety-Limiting Values
    9. 7.9  Electrical Characteristics
    10. 7.10 Switching Characteristics
    11. 7.11 Insulation Characteristics Curves
    12. 7.12 Typical Characteristics
  8. Parameter Measurement Information
    1. 8.1 Propagation Delay and Pulse Width Distortion
    2. 8.2 Rising and Falling Time
    3. 8.3 Input and Disable Response Time
    4. 8.4 Programable Dead Time
    5. 8.5 Power-up UVLO Delay to OUTPUT
    6. 8.6 CMTI Testing
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 VDD, VCCI, and Undervoltage Lock Out (UVLO)
      2. 9.3.2 Input and Output Logic Table
      3. 9.3.3 Input Stage
      4. 9.3.4 Output Stage
      5. 9.3.5 Diode Structure in the UCC21520 and the UCC21520A
    4. 9.4 Device Functional Modes
      1. 9.4.1 Disable Pin
      2. 9.4.2 Programmable Dead-Time (DT) Pin
        1. 9.4.2.1 Tying the DT Pin to VCC
        2. 9.4.2.2 DT Pin Connected to a Programming Resistor between DT and GND Pins
        3. 9.4.2.3 41
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Designing INA/INB Input Filter
        2. 10.2.2.2 Select External Bootstrap Diode and its Series Resistor
        3. 10.2.2.3 Gate Driver Output Resistor
        4. 10.2.2.4 Gate to Source Resistor Selection
        5. 10.2.2.5 Estimate Gate Driver Power Loss
        6. 10.2.2.6 Estimating Junction Temperature
        7. 10.2.2.7 Selecting VCCI, VDDA/B Capacitor
          1. 10.2.2.7.1 Selecting a VCCI Capacitor
          2. 10.2.2.7.2 Selecting a VDDA (Bootstrap) Capacitor
          3. 10.2.2.7.3 Select a VDDB Capacitor
        8. 10.2.2.8 Dead Time Setting Guidelines
        9. 10.2.2.9 Application Circuits with Output Stage Negative Bias
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Third-Party Products Disclaimer
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 Certifications
    4. 13.4 Receiving Notification of Documentation Updates
    5. 13.5 Support Resources
    6. 13.6 Trademarks
    7. 13.7 Electrostatic Discharge Caution
    8. 13.8 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Estimating Junction Temperature

The junction temperature (TJ) of the UCC21520 can be estimated with:

Equation 18. GUID-D53B3B36-EB26-440B-B06C-859C22B3DD7B-low.gif

where

  • TC is the UCC21520 case-top temperature measured with a thermocouple or some other instrument, and
  • ΨJT is the Junction-to-top characterization parameter from the Section 7.4 table.

Using the junction-to-top characterization parameter (ΨJT) instead of the junction-to-case thermal resistance (RΘJC) can greatly improve the accuracy of the junction temperature estimation. The majority of the thermal energy of most ICs is released into the PCB through the package leads, whereas only a small percentage of the total energy is released through the top of the case (where thermocouple measurements are usually conducted). RΘJC can only be used effectively when most of the thermal energy is released through the case, such as with metal packages or when a heatsink is applied to an IC package. In all other cases, use of RΘJC will inaccurately estimate the true junction temperature. ΨJT is experimentally derived by assuming that the amount of energy leaving through the top of the IC will be similar in both the testing environment and the application environment. As long as the recommended layout guidelines are observed, junction temperature estimates can be made accurately to within a few degrees Celsius. For more information, see the Semiconductor and IC Package Thermal Metrics Application Report.