SLUSD31F October   2018  – July 2026 UCC23513

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Function
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Power Ratings
    6. 5.6  Insulation Specifications
    7. 5.7  Safety-Related Certifications
    8. 5.8  Safety Limiting Values
    9. 5.9  Electrical Characteristics
    10. 5.10 Switching Characteristics
    11. 5.11 Insulation Characteristics Curves
    12. 5.12 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Propagation Delay, Rise Time and Fall Time
    2. 6.2 IOH and IOL testing
    3. 6.3 CMTI Testing
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Power Supply
      2. 7.3.2 Input Stage
      3. 7.3.3 Output Stage
      4. 7.3.4 Protection Features
        1. 7.3.4.1 Undervoltage Lockout (UVLO)
        2. 7.3.4.2 Active Pulldown
        3. 7.3.4.3 Short-Circuit Clamping
    4. 7.4 Device Functional Modes
      1. 7.4.1 ESD Structure
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Selecting the Input Resistor
        2. 8.2.2.2 Gate Driver Output Resistor
        3. 8.2.2.3 Estimate Gate-Driver Power Loss
          1. 8.2.2.3.1 Case 1 - Linear Pull-Up and Pull-Down Resistor
          2. 8.2.2.3.2 Case 2 - Nonlinear pull-up and pull-down Resistor
        4. 8.2.2.4 Estimating Junction Temperature
        5. 8.2.2.5 Selecting VCC Capacitor
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
      3. 8.4.3 PCB Material
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.3.4.2 Active Pulldown

The active pull-down function is used to pull the IGBT or MOSFET gate to the low state when no power is connected to the VCC supply. This feature prevents false IGBT and MOSFET turn-on by clamping VOUT pin to approximately 2V.

When the output stage of the driver is in an unbiased condition (VCC floating), the driver outputs (see Figure 7-4) are held low by an active clamp circuit that limits the voltage rise on the driver outputs. In this condition, the upper PMOS and NMOS are held off while the lower NMOS gate is tied to the driver output through an internal 500kΩ resistor. In this configuration, the lower NMOS device effectively clamps the output (VOUT) to less than 2V.