UCC23513

• single channel isolated gate driver with opto-compatible input
• Pin-to-pin, drop in upgrade for opto isolated gate drivers
• peak output current
• 14-V to 33-V output driver supply voltage
  • 8-V (B) and 12-V VCC UVLO Options
• Rail-to-rail output
• 105-ns (maximum) propagation delay
• 25-ns (maximum) part-to-part delay matching
• 35-ns (maximum) pulse width distortion
• 150-kV/µs (minimum) common-mode transient immunity (CMTI)
• Isolation barrier life >50 Years
• 13-V reverse polarity voltage handling capability on input stage
• Stretched SO-6 package with >8.5-mm creepage and clearance
• Operating junction temperature, T_J: –40°C to +150°C
• Safety-related certifications:
  • 8000-V_PK reinforced isolation per DIN V VDE V0884-11: 2017-01
  • 5.7-kV_RMS isolation for 1 minute per UL 1577
  • CQC certification per GB4943.1-2011

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The opto-compatible, single-channel, isolated gate driver for IGBTs, MOSFETs and SiC MOSFETs, with 4.5-A source and 5.3-A sink peak output current and 5.7-kV_RMS isolation rating. The high supply voltage range of 33-V allows the use of bipolar supplies to effectively drive IGBTs and SiC power FETs. can drive both low side and high side power FETs bring significant performance and reliability upgrades over opto-coupler based gate drivers while maintaining pin-to-pin compatibility in both schematic and layout design. Performance highlights include high common mode transient immunity (CMTI), low propagation delay, and small pulse width distortion. Tight process control results in small part-to-part skew. The input stage is an emulated diode (e-diode) which means long term reliability and excellent aging characteristics compared to traditional LEDs. igh performance and reliability makes ideal for use in all types of motor drives, . The higher operating temperature opens up opportunities for applications not supported by traditional optocouplers.