SLUSES3A October   2023  – December 2023 UCC25660

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Input Power Proportional Control
        1. 7.3.1.1 Voltage Feedforward
      2. 7.3.2 VCR Synthesizer
      3. 7.3.3 Feedback Chain (Control Input)
      4. 7.3.4 Adaptive Dead-Time
      5. 7.3.5 Input Voltage Sensing
        1. 7.3.5.1 Brown in and Brown out Tresholds and Options
        2. 7.3.5.2 Output OVP and External OTP
      6. 7.3.6 Resonant Tank Current Sensing
    4. 7.4 Protections
      1. 7.4.1 Zero Current Switching (ZCS) Protection
      2. 7.4.2 Minimum Current Turn-off During Soft Start
      3. 7.4.3 Cycle by Cycle Current Limit and Short Circuit Protection
      4. 7.4.4 Overload (OLP) Protection
      5. 7.4.5 VCC OVP Protection
    5. 7.5 Device Functional Modes
      1. 7.5.1 Startup
        1. 7.5.1.1 With HV Startup
        2. 7.5.1.2 Without HV Startup
      2. 7.5.2 Soft Start Ramp
        1. 7.5.2.1 Startup Transition to Regulation
      3. 7.5.3 Light Load Management
        1. 7.5.3.1 Operating Modes (Burst Pattern)
        2. 7.5.3.2 Mode Transition Management
        3. 7.5.3.3 Burst Mode Threshold Programming
        4. 7.5.3.4 PFC On/Off
      4. 7.5.4 X-Capacitor Discharge
        1. 7.5.4.1 Detecting Through HV Pin Only
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  LLC Power Stage Requirements
        2. 8.2.2.2  LLC Gain Range
        3. 8.2.2.3  Select Ln and Qe
        4. 8.2.2.4  Determine Equivalent Load Resistance
        5. 8.2.2.5  Determine Component Parameters for LLC Resonant Circuit
        6. 8.2.2.6  LLC Primary-Side Currents
        7. 8.2.2.7  LLC Secondary-Side Currents
        8. 8.2.2.8  LLC Transformer
        9. 8.2.2.9  LLC Resonant Inductor
        10. 8.2.2.10 LLC Resonant Capacitor
        11. 8.2.2.11 LLC Primary-Side MOSFETs
        12. 8.2.2.12 Design Considerations for Adaptive Dead-Time
        13. 8.2.2.13 LLC Rectifier Diodes
        14. 8.2.2.14 LLC Output Capacitors
        15. 8.2.2.15 HV Pin Series Resistors
        16. 8.2.2.16 BLK Pin Voltage Divider
        17. 8.2.2.17 ISNS Pin Differentiator
        18. 8.2.2.18 TSET Pin
        19. 8.2.2.19 OVP/OTP Pin
        20. 8.2.2.20 Burst Mode Programming
        21. 8.2.2.21 Application Curves
    3. 8.3 Power Supply Recommendations
      1. 8.3.1 VCCP Pin Capacitor
      2. 8.3.2 Boot Capacitor
      3. 8.3.3 V5P Pin Capacitor
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
        1. 8.4.2.1 Schematics
        2. 8.4.2.2 Schematics
  10. Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Layout Guidelines

  • Put a 2.2µF ceramic capacitor on VCCP pin in addition to the energy storage electrolytic capacitor. The 2.2µF ceramic capacitor should be put as close as possible to the VCC pin.
  • Minimum recommended boot capacitor, CB, is 0.1µF. The minimum value of the boot capacitor needs to be determined by the minimum burst frequency. The boot capacitor should be large enough to hold the bootstrap voltage during the lowest burst frequency. Please refer to the boot leakage current in the electrical table.
  • Signal ground and power ground should be single-point connected. Power ground is recommended to connect to the negative terminal of the LLC input bulk capacitor.
  • The filtering capacitors for ISNS, BLK, LL, BW/OTP should be put as close as possible to the pins.
  • FB trace should be as short as possible
  • Use film capacitors or C0G, NP0 ceramic capacitors for the ISNS capacitor for low distortion
  • Add necessary filtering capacitors on the VCCP pin to filter out the high spikes on the bias winding waveform.
  • Keep necessary high voltage clearance and creepage.
  • If 2kV HBM ESD rating is needed on HV pin, it is acceptable to place a 100pF capacitor from the HV pin to ground in order to pass up to 2kV HBM ESD.