SLES275A January 2015 – December 2017 VSP5324-Q1
PRODUCTION DATA.
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Supply voltage | AVDD | –0.3 | 2.2 | V |
| LVDD | –0.3 | 2.2 | V | |
| Ground voltage differences | Between AGND and LGND | –0.3 | 0.3 | V |
| Input voltage | Digital outputs | –0.3 | lesser of 2.2 or (LVDD + 0.3) | V |
| Digital inputs (CLKN, CLKP(2), RESET, SCLK, SDATA, CS, SYNC, PD, INT/EXT) | –0.3 | lesser of 2.2 or (LVDD + 0.3) | V | |
| Analog inputs | –0.3 | lesser of 2.2 or (LVDD + 0.3) | V | |
| Input current (all pins except supplies) | –10 | 10 | mA | |
| Ambient temperature, under bias, TA | –40 | 105 | °C | |
| Junction temperature, TJ | 125 | °C | ||
| Storage temperature, Tstg | –55 | 125 | °C | |
| VALUE | UNIT | ||||
|---|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human body model (HBM), per AEC Q100-002(1) | ±2000 | V | |
| Charged device model (CDM), per AEC Q100-011 | Other pins | ±500 | |||
| Corner pins (1, 16, 17, 32, 33, 48, 49, and 64) | ±750 | ||||
| MIN | NOM | MAX | UNIT | |||
|---|---|---|---|---|---|---|
| V(AVDD) | Analog supply voltage | 1.7 | 1.8 | 1.9 | V | |
| V(LVDD) | Digital supply voltage | 1.7 | 1.8 | 1.9 | V | |
| VID | Differential input voltage | 2 | VPP | |||
| VIC | Input common-mode voltage | VIC ± 50 | mV | |||
| Input clock sample rate | Two-lane LVDS interface | 10 | 80 | MSPS | ||
| One-lane LVDS interface | 10 | 50 | MSPS | |||
| (VCLKP – VCLKM) | Input clock amplitude differential | Sine wave, ac-coupled | 1.5 | VPP | ||
| LVPECL, ac-coupled | 1.6 | VPP | ||||
| LVDS, ac-coupled | 0.7 | VPP | ||||
| LVCMOS, single-ended, ac-coupled | 3.3 | V | ||||
| Duty cycle | 35% | 50% | 65% | |||
| CLOAD | Maximum external capacitance from each output pin to DRGND | 5 | pF | |||
| RLOAD | Differential resistance between LVDS output pairs (LVDS mode) | 100 | Ω | |||
| TA | Operating free-air | –40 | 105 | °C | ||
| THERMAL METRIC(1) | VSP5324-Q1 | UNIT | |
|---|---|---|---|
| RGC (VQFN) | |||
| 64 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 20.6 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 6.1 | °C/W |
| RθJB | Junction-to-board thermal resistance | 2.7 | °C/W |
| ψJT | Junction-to-top characterization parameter | 0.2 | °C/W |
| ψJB | Junction-to-board characterization parameter | 2.6 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | 0.4 | °C/W |
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| Resolution | 12 | Bits | |||||
| SNR | Signal-to-noise ratio | ƒIN = 5 MHz | 68 | 70 | dBFS | ||
| ƒIN = 30 MHz | 69.5 | dBFS | |||||
| SINAD | Signal-to-noise and distortion ratio | ƒIN = 5 MHz | 69.8 | dBFS | |||
| ƒIN = 30 MHz | 69.2 | dBFS | |||||
| SFDR | Spurious-free dynamic range | ƒIN = 5 MHz | 64 | 85 | dBc | ||
| ƒIN = 30 MHz | 82 | dBc | |||||
| THD | Total harmonic distortion | ƒIN = 5 MHz | 63 | 81.5 | dBc | ||
| ƒIN = 30 MHz | 78 | dBc | |||||
| HD2 | Second-harmonic distortion | ƒIN = 5 MHz | 64 | 90 | dBc | ||
| ƒIN = 30 MHz | 86 | dBc | |||||
| HD3 | Third-harmonic distortion | ƒIN = 5 MHz | 64 | 85 | dBc | ||
| ƒIN = 30 MHz | 82 | dBc | |||||
| Worst spur (other than second and third harmonics) |
ƒIN = 5 MHz | 91 | dBc | ||||
| ƒIN = 30 MHz | 83 | dBc | |||||
| IMD | Two-tone intermodulation distortion | ƒ1 = 8 MHz, ƒ2 = 10 MHz, each tone at –7 dBFS |
83 | dBc | |||
| Crosstalk (far channel) | 10-MHz full-scale signal on aggressor channel; no input signal applied on victim channel | 95 | dB | ||||
| Input overload recovery | Recovery to within 1% (of full-scale) for 6-dB overload with sine-wave input | 1 | Clock cycle | ||||
| PSRR | AC power-supply rejection ratio | For 50-mVPP signal on AVDD supply, up to 10 MHz, no signal applied to analog inputs |
50 | dB | |||
| ENOB | Effective number of bits | ƒIN = 5 MHz | 11.3 | Bits | |||
| DNL | Differential nonlinearity | ƒIN = 5 MHz | –0.8 | ±0.2 | 0.8 | LSBs | |
| INL | Integral nonlinearity | ƒIN = 5 MHz | ±0.3 | 1 | LSBs | ||
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| ANALOG INx_PUT | |||||||
| VID | Differential input | Voltage range | 2 | VPP | |||
| Resistance, at dc | 2 | kΩ | |||||
| Capacitance, at dc | 2.2 | pF | |||||
| Analog input bandwidth | 550 | MHz | |||||
| Analog input common-mode current (per input pin) | 1.6 | µA/ MSPS |
|||||
| VOC | Common-mode output voltage | 0.95 | V | ||||
| IO(VCM) | VCM output current capability | 5 | mA | ||||
| DC ACCURACY | |||||||
| Offset error | ±5 | ±20 | mV | ||||
| EGREF | Gain error resulting from internal reference inaccuracy alone | –2 | 2 | %FS | |||
| EGCHAN | Gain error of channel alone | 0.5 | %FS | ||||
| POWER SUPPLY | |||||||
| IAVDD | Analog supply current | 80 MSPS | 114 | 135 | mA | ||
| 50 MSPS | 86 | mA | |||||
| ILVDD | Output buffer supply current | Two-lane LVDS interface, 80 MSPS, 350-mV swing with 100-Ω external termination | 69 | 85 | mA | ||
| One-lane LVDS interface, 50 MSPS, 350-mV swing with 100-Ω external termination | 56 | mA | |||||
| Analog power | 80 MSPS | 205 | mW | ||||
| 50 MSPS | 155 | mW | |||||
| Digital power LVDS interface | Two-lane LVDS interface, 80 MSPS, 350-mV swing with 100-Ω external termination | 124 | mW | ||||
| One-lane LVDS interface, 50 MSPS, 350-mV swing with 100-Ω external termination | 101 | mW | |||||
| Total power | 80 MSPS, two-lane LVDS interface | 329 | mW | ||||
| 50 MSPS, one-lane LVDS interface | 256 | mW | |||||
| Global power-down | 40 | mW | |||||
| Standby power | 135 | mW | |||||
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| DIGITAL INx_PUTS (RESET, SCLK, SDATA, CS, PDN, SYNC, INT/EXT) | |||||||
| VIH | High-level input voltage | All digital inputs support 1.8-V and 3.3-V CMOS logic levels | > 1.3 | V | |||
| VIL | Low-level input voltage | All digital inputs support 1.8-V and 3.3-V CMOS logic levels | < 0.4 | V | |||
| IIH | High-level input current | VIH = 1.8 V | 6 | µA | |||
| IIL | Low-level input current | VIL = 0 V | < 0.1 | µA | |||
| DIGITAL OUTPUTS | |||||||
| VOH | High-level output voltage | CMOS interface (SDOUT) | AVDD – 0.1 | V | |||
| VOL | Low-level output voltage | CMOS interface (SDOUT) | 0.1 | V | |||
| VOD(H) | High-level output differential voltage | LVDS interface (OUTP, OUTM, LCLKP, LCLKM, ADCLKP, ADCLKM), with an external 100-Ω termination | 245 | 420 | mV | ||
| VOD(L) | Low-level output differential voltage | LVDS interface (OUTP, OUTM, LCLKP, LCLKM, ADCLKP, ADCLKM), with an external 100-Ω termination | –420 | –245 | mV | ||
| VOC | Output common-mode voltage | 1.05 | V | ||||
| MIN | NOM | MAX | UNIT | ||||
|---|---|---|---|---|---|---|---|
| Aperture delay | 4 | ns | |||||
| Aperture delay matching(2)(3) | Between the two channels of the same device | ±175 | ps | ||||
| Aperture delay variation | Between two devices at the same temperature and LVDD supply | 2.5 | ns | ||||
| Aperture jitter (RMS) | 320 | fs | |||||
| Wakeup time | Time to valid data after coming out of partial power-down mode |
5 | 50 | µs | |||
| Time to valid data after coming out of global power-down mode |
100 | 500 | µs | ||||
| ADC latency | One-lane LVDS output interface | 11 | Clock cycles | ||||
| Two-lane LVDS output interface | 15 | Clock cycles | |||||
| tsu | Data setup time | Data valid to zero crossing of LCLKP, 80 MSPS, two-lane LVDS |
0.61 | ns | |||
| th | Data hold time(4) | Zero crossing of LCLKP to data becoming invalid, 80 MSPS, two-lane LVDS |
0.74 | ns | |||
| tp | Clock propagation delay | Input clock rising edge crossover to frame clock rising edge crossover, two-lane LVDS for 10 ≤ ƒS ≤ 80 MSPS |
(11 / 12) × tS + td |
ns | |||
| Input clock rising edge crossover to frame clock rising edge crossover, one-lane LVDS for 10 ≤ ƒS ≤ 65 MSPS |
(9 / 12) × tS + td |
ns | |||||
| td | Delay time | 6.8 | 9 | 11.8 | ns | ||
| LVDS bit clock duty cycle | Differential clock duty cycle (LCLKP – LCLKM) | 50 | % | ||||
| tf | Data fall time | Rise time measured from –100 mV to 100 mV, 10 MSPS ≤ sampling frequency ≤ 80 MSPS |
0.2 | ns | |||
| tr | Data rise time | Rise time measured from –100 mV to 100 mV, 10 MSPS ≤ sampling frequency ≤ 80 MSPS |
0.2 | ns | |||
| tr(CLK) | Output clock rise time | Rise time measured from –100 mV to 100 mV, 10 MSPS ≤ sampling frequency ≤ 80 MSPS |
0.18 | ns | |||
| tf(CLK) | Output clock fall time | Rise time measured from –100 mV to 100 mV, 10 MSPS ≤ sampling frequency ≤ 80 MSPS |
0.18 | ns | |||
| MIN | MAX | UNIT | |||
|---|---|---|---|---|---|
| th | LCLKP zero-crossing to data becoming invalid (both edges) | ƒ(SAMPLE) = 40 MSPS | 0.75 | ns | |
| ƒ(SAMPLE) = 50 MSPS | 0.47 | ||||
| ƒ(SAMPLE) = 65 MSPS | 0.25 | ||||
| tsu | Data valid to LCLKP zero-crossing (both edges) | ƒ(SAMPLE) = 40 MSPS | 0.62 | ns | |
| ƒ(SAMPLE) = 50 MSPS | 0.38 | ||||
| ƒ(SAMPLE) = 65 MSPS | 0.19 | ||||
| MIN | MAX | UNIT | |||
|---|---|---|---|---|---|
| th | LCLKP zero-crossing to data becoming invalid (both edges) | ƒ(SAMPLE) = 40 MSPS | 1.9 | ns | |
| ƒ(SAMPLE) = 50 MSPS | 1.55 | ||||
| ƒ(SAMPLE) = 65 MSPS | 1.1 | ||||
| tsu | Data valid to LCLKP zero-crossing (both edges) | ƒ(SAMPLE) = 40 MSPS | 1.44 | ns | |
| ƒ(SAMPLE) = 50 MSPS | 1.02 | ||||
| ƒ(SAMPLE) = 65 MSPS | 0.64 | ||||
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| ƒ(SCLK) | SCLK frequency = 1 / tSCLK | > DC | MHz | |
| tsu(LOADS) | SEN to SCLK setup time | 33 | ns | |
| tsu(LOADH) | SCLK to SEN hold time | 33 | ns | |
| tsu(D) | SDATA setup time | 33 | ns | |
| th(D) | SDATA hold time | 33 | ns | |
NOINDENT:
With an external 100-Ω termination..
Figure 2. LVDS Mode Timing
Figure 3. Serial Interface Timing
| SNR = 69.6 dBFS | SINAD = 69.5 dBFS |
| SFDR = 89.3 dBc | THD = 85.9 dBc |
| Sample Rate = 80 MSPS |
| SNR = 68.5 dBFS | SINAD = 67.8 dBFS |
| SFDR = 76.5 dBc | THD = 75 dBc |
| Sample Rate = 80 MSPS |
| SNR = 69.6 dBFS | SINAD = 69.4 dBFS |
| SFDR = 84.8 dBc | THD = 83.2 dBc |
| Sample Rate = 80 MSPS |
| SNR = 69.8 dBFS | SINAD = 69.7 dBFS |
| SFDR = 85.1 dBc | THD = 84.7 dBc |
| Sample Rate = 40 MSPS |
| SNR = 69.6 dBFS | SINAD = 69.5 dBFS |
| SFDR = 86.8 dBc | THD = 84 dBc |
| Sample Rate = 40 MSPS |
| ƒIN = 5 MHz | ||
| ƒIN = 5 MHz |
| ƒIN = 5 MHz | External reference using the VCM pin | |
| ƒIN = 5 MHz |
| ƒIN = 5 MHz | ||
| A 0.7-VPP 5-MHz sine-wave input is applied on the INx_P pin | ||
| The INx_M pin is connected to the device VCM pin |
Figure 28. Filter Response (Decimate-by-2)
Figure 34. FFT (0 MHz to 1 MHz) for 5-MHz Input Signal
Figure 36. Analog Supply Current
Figure 38. Digital Supply Current
| SNR = 67.2 dBFS | SINAD = 66.6 dBFS |
| SFDR = 76.5 dBc | THD = 74 dBc |
| Sample Rate = 40 MSPS |
| ƒIN = 5 MHz | ||
| ƒIN = 5 MHz |
| ƒIN = 5 MHz | ||
| ƒIN = 5 MHz |
| A 0.7-VPP 5-MHz sine-wave input is applied on the INx_P pin | ||
| The INx_M pin is connected to the device VCM pin |
| ƒIN = 3 MHz | 50-mVPP signal superimposed on the input common-mode | |
Figure 29. Filter Response (Decimate-by-4)
| SNR = 70.8 dBFS | SINAD = 70.7 dBFS | SFDR = 88.7 dBc |
| THD = 87.3 dBc | Decimate-by-2 filter enabled | |
| SNR = 70.8 dBFS | SINAD = 70.7 dBFS |
| SFDR = 88.7 dBc | THD = 87.3 dBc |
Figure 35. FFT (39 MHz to 40 MHz) for 5-MHz Input Signal
Figure 37. Power Consumption on Analog Supply
Figure 39. Power Consumption on Digital Supply