JAJSO96 March   2022 CC1311P3

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 説明
  4. 4 機能ブロック図
  5. 5 Revision History
  6. 6 Device Comparison
  7. 7 Pin Configuration and Functions
    1. 7.1 Pin Diagram – RGZ Package (Top View)
    2. 7.2 Signal Descriptions – RGZ Package
    3. 7.3 Connections for Unused Pins and Modules
  8. 8 Specifications
    1. 8.1  Absolute Maximum Ratings
    2. 8.2  ESD Ratings
    3. 8.3  Recommended Operating Conditions
    4. 8.4  Power Supply and Modules
    5. 8.5  Power Consumption - Power Modes
    6. 8.6  Power Consumption - Radio Modes
    7. 8.7  Nonvolatile (Flash) Memory Characteristics
    8. 8.8  Thermal Resistance Characteristics
    9. 8.9  RF Frequency Bands
    10. 8.10 861 MHz to 1054 MHz - Receive (RX)
    11. 8.11 861 MHz to 1054 MHz - Transmit (TX) 
    12. 8.12 861 MHz to 1054 MHz - PLL Phase Noise Wideband Mode
    13. 8.13 861 MHz to 1054 MHz - PLL Phase Noise Narrowband Mode
    14. 8.14 359 MHz to 527 MHz - Receive (RX)
    15. 8.15 359 MHz to 527 MHz - Transmit (TX) 
    16. 8.16 359 MHz to 527 MHz - PLL Phase Noise
    17. 8.17 Timing and Switching Characteristics
      1. 8.17.1 Reset Timing
      2. 8.17.2 Wakeup Timing
      3. 8.17.3 Clock Specifications
        1. 8.17.3.1 48 MHz Crystal Oscillator (XOSC_HF)
        2. 8.17.3.2 48 MHz RC Oscillator (RCOSC_HF)
        3. 8.17.3.3 32.768 kHz Crystal Oscillator (XOSC_LF)
        4. 8.17.3.4 32 kHz RC Oscillator (RCOSC_LF)
      4. 8.17.4 Synchronous Serial Interface (SSI) Characteristics
        1. 8.17.4.1 Synchronous Serial Interface (SSI) Characteristics
        2.       38
      5. 8.17.5 UART
        1. 8.17.5.1 UART Characteristics
    18. 8.18 Peripheral Characteristics
      1. 8.18.1 ADC
        1. 8.18.1.1 Analog-to-Digital Converter (ADC) Characteristics
      2. 8.18.2 DAC
        1. 8.18.2.1 Digital-to-Analog Converter (DAC) Characteristics
      3. 8.18.3 Temperature and Battery Monitor
        1. 8.18.3.1 Temperature Sensor
        2. 8.18.3.2 Battery Monitor
      4. 8.18.4 Comparator
        1. 8.18.4.1 Continuous Time Comparator
      5. 8.18.5 GPIO
        1. 8.18.5.1 GPIO DC Characteristics
    19. 8.19 Typical Characteristics
      1. 8.19.1 MCU Current
      2. 8.19.2 RX Current
      3. 8.19.3 TX Current
      4. 8.19.4 RX Performance
      5. 8.19.5 TX Performance
      6. 8.19.6 ADC Performance
  9. 9 Detailed Description
    1. 9.1  Overview
    2. 9.2  System CPU
    3. 9.3  Radio (RF Core)
      1. 9.3.1 Proprietary Radio Formats
    4. 9.4  Memory
    5. 9.5  Cryptography
    6. 9.6  Timers
    7. 9.7  Serial Peripherals and I/O
    8. 9.8  Battery and Temperature Monitor
    9. 9.9  µDMA
    10. 9.10 Debug
    11. 9.11 Power Management
    12. 9.12 Clock Systems
    13. 9.13 Network Processor
  10. 10Application, Implementation, and Layout
    1. 10.1 Reference Designs
  11. 11Device and Documentation Support
    1. 11.1 Device Nomenclature
    2. 11.2 Tools and Software
      1. 11.2.1 SimpleLink™ Microcontroller Platform
    3. 11.3 Documentation Support
    4. 11.4 サポート・リソース
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • RGZ|48
サーマルパッド・メカニカル・データ
発注情報

8.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Operating ambient temperature(1)(2) –40 105 °C
Operating junction temperature(1)(2) –40 115 °C
Operating supply voltage (VDDS) 1.8 3.8 V
Operating supply voltage (VDDS), boost mode
 		 VDDR = 1.95 V
+14 dBm RF output sub-1 GHz power amplifier		 2.1 3.8 V
Operating supply voltage (VDDS), boost mode +20 dBm RF output high power amplifier 3.3 3.8 V
Rising supply voltage slew rate 0 100 mV/µs
Falling supply voltage slew rate(3) 0 20 mV/µs
(1) Operation at or near maximum operating temperature for extended durations will result in lifetime reduction.
(2) For thermal resistance characteristics refer to Section 8.8.
(3) For small coin-cell batteries, with high worst-case end-of-life equivalent source resistance, a 22-µF VDDS input capacitor must be used to ensure compliance with this slew rate.