SLVSCX2B August   2015  – February 2016 DRV8305

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SPI Timing Requirements (Slave Mode Only)
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Integrated Three-Phase Gate Driver
      2. 7.3.2 INHx/INLx: Gate Driver Input Modes
      3. 7.3.3 VCPH Charge Pump: High-Side Gate Supply
      4. 7.3.4 VCP_LSD LDO: Low-Side Gate Supply
      5. 7.3.5 GHx/GLx: Half-Bridge Gate Drivers
        1. 7.3.5.1 IDRIVE: Gate Driver Output Current
        2. 7.3.5.2 TDRIVE: Gate Driver State Machine
        3. 7.3.5.3 CSAs: Current Shunt Amplifiers
      6. 7.3.6 DVDD and AVDD: Internal Voltage Regulators
      7. 7.3.7 VREG: Voltage Regulator Output
      8. 7.3.8 Protection Features
        1. 7.3.8.1 Fault and Warning Classification
        2. 7.3.8.2 MOSFET Shoot-Through Protection (TDRIVE)
        3. 7.3.8.3 MOSFET Overcurrent Protection (VDS_OCP)
          1. 7.3.8.3.1 MOSFET dV/dt Turn On Protection (TDRIVE)
          2. 7.3.8.3.2 MOSFET Gate Drive Protection (GDF)
        4. 7.3.8.4 Low-Side Source Monitors (SNS_OCP)
        5. 7.3.8.5 Fault and Warning Operating Modes
      9. 7.3.9 Undervoltage Warning (UVFL), Undervoltage Lockout (UVLO), and Overvoltage (OV) Protection
        1. 7.3.9.1 Overtemperature Warning (OTW) and Shutdown (OTSD) Protection
        2. 7.3.9.2 Reverse Supply Protection
        3. 7.3.9.3 MCU Watchdog
        4. 7.3.9.4 VREG Undervoltage (VREG_UV)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Power Up Sequence
      2. 7.4.2 Standby State
      3. 7.4.3 Operating State
      4. 7.4.4 Sleep State
      5. 7.4.5 Limp Home or Fail Code Operation
    5. 7.5 Programming
      1. 7.5.1 SPI Communication
        1. 7.5.1.1 SPI
        2. 7.5.1.2 SPI Format
    6. 7.6 Register Maps
      1. 7.6.1 Status Registers
        1. 7.6.1.1 Warning and Watchdog Reset (Address = 0x1)
        2. 7.6.1.2 OV/VDS Faults (Address = 0x2)
        3. 7.6.1.3 IC Faults (Address = 0x3)
        4. 7.6.1.4 VGS Faults (Address = 0x4)
      2. 7.6.2 Control Registers
        1. 7.6.2.1 HS Gate Drive Control (Address = 0x5)
        2. 7.6.2.2 LS Gate Drive Control (Address = 0x6)
        3. 7.6.2.3 Gate Drive Control (Address = 0x7)
        4. 7.6.2.4 IC Operation (Address = 0x9)
        5. 7.6.2.5 Shunt Amplifier Control (Address = 0xA)
        6. 7.6.2.6 Voltage Regulator Control (Address = 0xB)
        7. 7.6.2.7 VDS Sense Control (Address = 0xC)
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Gate Drive Average Current
        2. 8.2.2.2 MOSFET Slew Rates
        3. 8.2.2.3 Overcurrent Protection
        4. 8.2.2.4 Current Sense Amplifiers
      3. 8.2.3 Application Curves
  9. Power Supply Recommendations
    1. 9.1 Bulk Capacitance
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

11 Device and Documentation Support

11.1 Documentation Support

See the following documents for additional information:

  • Understanding IDRIVE and TDRIVE in TI Motor Gate Drivers, SLVA714.
  • PowerPAD™ Thermally Enhanced Package, SLMA002
  • PowerPAD™ Made Easy, SLMA004
  • Sensored 3-Phase BLDC Motor Control Using MSP430, SLAA503

11.2 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

11.3 Trademarks

E2E is a trademark of Texas Instruments.

11.4 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

11.5 Glossary

SLYZ022TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.