SLVSCX2B August   2015  – February 2016 DRV8305

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SPI Timing Requirements (Slave Mode Only)
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Integrated Three-Phase Gate Driver
      2. 7.3.2 INHx/INLx: Gate Driver Input Modes
      3. 7.3.3 VCPH Charge Pump: High-Side Gate Supply
      4. 7.3.4 VCP_LSD LDO: Low-Side Gate Supply
      5. 7.3.5 GHx/GLx: Half-Bridge Gate Drivers
        1. 7.3.5.1 IDRIVE: Gate Driver Output Current
        2. 7.3.5.2 TDRIVE: Gate Driver State Machine
        3. 7.3.5.3 CSAs: Current Shunt Amplifiers
      6. 7.3.6 DVDD and AVDD: Internal Voltage Regulators
      7. 7.3.7 VREG: Voltage Regulator Output
      8. 7.3.8 Protection Features
        1. 7.3.8.1 Fault and Warning Classification
        2. 7.3.8.2 MOSFET Shoot-Through Protection (TDRIVE)
        3. 7.3.8.3 MOSFET Overcurrent Protection (VDS_OCP)
          1. 7.3.8.3.1 MOSFET dV/dt Turn On Protection (TDRIVE)
          2. 7.3.8.3.2 MOSFET Gate Drive Protection (GDF)
        4. 7.3.8.4 Low-Side Source Monitors (SNS_OCP)
        5. 7.3.8.5 Fault and Warning Operating Modes
      9. 7.3.9 Undervoltage Warning (UVFL), Undervoltage Lockout (UVLO), and Overvoltage (OV) Protection
        1. 7.3.9.1 Overtemperature Warning (OTW) and Shutdown (OTSD) Protection
        2. 7.3.9.2 Reverse Supply Protection
        3. 7.3.9.3 MCU Watchdog
        4. 7.3.9.4 VREG Undervoltage (VREG_UV)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Power Up Sequence
      2. 7.4.2 Standby State
      3. 7.4.3 Operating State
      4. 7.4.4 Sleep State
      5. 7.4.5 Limp Home or Fail Code Operation
    5. 7.5 Programming
      1. 7.5.1 SPI Communication
        1. 7.5.1.1 SPI
        2. 7.5.1.2 SPI Format
    6. 7.6 Register Maps
      1. 7.6.1 Status Registers
        1. 7.6.1.1 Warning and Watchdog Reset (Address = 0x1)
        2. 7.6.1.2 OV/VDS Faults (Address = 0x2)
        3. 7.6.1.3 IC Faults (Address = 0x3)
        4. 7.6.1.4 VGS Faults (Address = 0x4)
      2. 7.6.2 Control Registers
        1. 7.6.2.1 HS Gate Drive Control (Address = 0x5)
        2. 7.6.2.2 LS Gate Drive Control (Address = 0x6)
        3. 7.6.2.3 Gate Drive Control (Address = 0x7)
        4. 7.6.2.4 IC Operation (Address = 0x9)
        5. 7.6.2.5 Shunt Amplifier Control (Address = 0xA)
        6. 7.6.2.6 Voltage Regulator Control (Address = 0xB)
        7. 7.6.2.7 VDS Sense Control (Address = 0xC)
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Gate Drive Average Current
        2. 8.2.2.2 MOSFET Slew Rates
        3. 8.2.2.3 Overcurrent Protection
        4. 8.2.2.4 Current Sense Amplifiers
      3. 8.2.3 Application Curves
  9. Power Supply Recommendations
    1. 9.1 Bulk Capacitance
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

10 Layout

10.1 Layout Guidelines

Use the following layout recommendations when designing a PCB for the DRV8305.

  • The DVDD and AVDD 1-μF bypass capacitors should connect directly to the adjacent GND pin to minimize loop impedance for the bypass capacitor.
  • The CP1 and CP2 0.047-μF flying capacitors should be placed directly next to the DRV8305 charge pump pins.
  • The VCPH 2.2-μF and VCP_LSD 1-μF bypass capacitors should be placed close to their corresponding pins with a direct path back to the DRV8305 GND net.
  • The PVDD 4.7-μF bypass capacitor should be placed as close as possible to the DRV8305 PVDD supply pin.
  • Use the proper footprint as shown in the Mechanical, Packaging, and Orderable Information section.
  • Minimize the loop length for the high-side and low-side gate drivers. The high-side loop is from the DRV8305 GH_X to the power MOSFET and returns through SH_X. The low-side loop is from the DRV8305 GL_X to the power MOSFET and returns through SL_X.

10.2 Layout Example

DRV8305 layout_ex_lvscx2.gif Figure 24. Layout Recommendation