JAJSHS2 August   2019 DS160PR410

ADVANCE INFORMATION for pre-production products; subject to change without notice.  

  1. 特長
  2. アプリケーション
  3. 概要
    1.     Device Images
      1.      代表的なアプリケーション
  4. 改訂履歴
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 DC Electrical Characteristics
    6. 6.6 High Speed Electrical Characteristics
    7. 6.7 SMBUS/I2C Timing Charateristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Linear Equalization
      2. 7.3.2 DC Gain
      3. 7.3.3 Receiver Detect State Machine
    4. 7.4 Device Functional Modes
      1. 7.4.1 Active PCIe Mode
      2. 7.4.2 Active Buffer Mode
      3. 7.4.3 Standby Mode
    5. 7.5 Programming
      1. 7.5.1 Control and Configuration Interface
        1. 7.5.1.1 Pin Mode
          1. 7.5.1.1.1 Four-Level Control Inputs
        2. 7.5.1.2 SMBUS/I2C Register Control Interface
        3. 7.5.1.3 SMBus/I2C Master Mode Configuration (EEPROM Self Load)
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 PCIE x4 Lane Configuration
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 DisplayPort Application
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11デバイスおよびドキュメントのサポート
    1. 11.1 ドキュメントのサポート
      1. 11.1.1 関連資料
    2. 11.2 ドキュメントの更新通知を受け取る方法
    3. 11.3 コミュニティ・リソース
    4. 11.4 商標
    5. 11.5 静電気放電に関する注意事項
    6. 11.6 Glossary
  12. 12メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Layout Guidelines

The following guidelines should be followed when designing the layout:

  1. Decoupling capacitors should be placed as close to the VDD pins as possible. Placing the decoupling capacitors directly underneath the device is recommended if the board design permits.
  2. High-speed differential signals TXnP/TXnN and RXnP/RXnN should be tightly coupled, skew matched, and impedance controlled.
  3. Vias should be avoided when possible on the high-speed differential signals. When vias must be used, take care to minimize the via stub, either by transitioning through most/all layers or by back drilling.
  4. GND relief can be used (but is not required) beneath the high-speed differential signal pads to improve signal integrity by counteracting the pad capacitance.
  5. GND vias should be placed directly beneath the device connecting the GND plane attached to the device to the GND planes on other layers. This has the added benefit of improving thermal conductivity from the device to the board.