JAJSR52 September 2023 LMG3526R050
PRODUCTION DATA
The LMG3526R050 is a lateral device grown on a Si substrate. The thermal pad is connected to the source of device. The LMG3526R050 can be used in applications with significant power dissipation, for example, hard-switched power converters. In these converter, TI recommends a heat sink connected to the top side of LMG3526R050. The heat sink can be applied with thermal interface materials (TIMs), like thermal pad with electrical isolation.
Refer to the High Voltage Half Bridge Design Guide for LMG3410 Smart GaN FET application note for more recommendations and performance data on thermal layouts.