JAJSR52 September 2023 LMG3526R050
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
GAN POWER TRANSISTOR | ||||||
RDS(on) | Drain-source on resistance | VIN = 5 V, TJ = 25°C | 43 | 55 | mΩ | |
VIN = 5 V, TJ = 125°C | 73 | mΩ | ||||
VSD | Third-quadrant mode source-drain voltage | IS = 0.1 A | 3.8 | V | ||
IS = 15 A | 3 | 5.3 | V | |||
IDSS | Drain leakage current | VDS = 600 V, TJ = 25°C | 1 | µA | ||
VDS = 600 V, TJ = 125°C | 7 | µA | ||||
COSS | Output capacitance | VDS = 400 V | 148 | pF | ||
CO(er) | Energy related effective output capacitance | VDS = 0 V to 400 V | 185 | pF | ||
CO(tr) | Time related effective output capacitance | 260 | pF | |||
QOSS | Output charge | 100 | nC | |||
QRR | Reverse recovery charge | 0 | nC | |||
VDD - SUPPLY CURRENTS | ||||||
VDD quiescent current | VVDD = 12 V, VIN = 0 V or 5 V | 700 | 1200 | µA | ||
VDD operating current | VVDD = 12 V, fIN = 140 kHz, soft-switching | 9.7 | 11 | mA | ||
BUCK BOOST CONVERTER | ||||||
VNEG output voltage | VNEG sinking 50 mA | –14 | V | |||
IBBSW,PK(low) | Peak BBSW sourcing current at low peak current mode setting (peak external buck-boost inductor current) |
0.3 | 0.4 | 0.5 | A | |
IBBSW,PK(high) | Peak BBSW sourcing current at low peak current mode setting (peak external buck-boost inductor current) |
0.8 | 1 | 1.2 | A | |
High peak current mode setting enable – IN positive-going threshold frequency | 280 | 420 | 515 | kHz | ||
LDO5V | ||||||
Output voltage | LDO5V sourcing 25 mA | 4.75 | 5 | 5.25 | V | |
Short-circuit current | 25 | 50 | 100 | mA | ||
IN | ||||||
VIN,IT+ | Positive-going input threshold voltage | 1.7 | 1.9 | 2.45 | V | |
VIN,IT- | Negative-going input threshold voltage | 0.7 | 1 | 1.3 | V | |
Input threshold hysteresis | 0.7 | 0.9 | 1.3 | V | ||
Input pull-down resistance | VIN = 2 V | 100 | 150 | 200 | kΩ | |
FAULT, OC/ZVD, TEMP - OUTPUT DRIVE | ||||||
Low-level output voltage | Output sinking 8 mA | 0.16 | 0.4 | V | ||
High-level output voltage | Output sourcing 8 mA, Measured as VLDO5V – VO |
0.2 | 0.45 | V | ||
VDD, VNEG - UNDERVOLTAGE LOCKOUT | ||||||
VVDD,IT+(UVLO) | VDD UVLO – positive-going threshold voltage | 6.4 | 7 | 7.6 | V | |
VDD UVLO – negative-going threshold voltage | 6 | 6.5 | 7.1 | V | ||
VDD UVLO – input threshold voltage hysteresis | 510 | mV | ||||
VNEG UVLO – negative-going threshold voltage | –13.6 | –13.0 | –12.3 | V | ||
VNEG UVLO – positive-going threshold voltage | –13.3 | –12.75 | –12.1 | V | ||
GATE DRIVER | ||||||
Turn-on slew rate | From VDS < 320 V to VDS < 80 V, RDRV disconnected from LDO5V, RRDRV = 300 kΩ, TJ = 25℃, VBUS = 400 V, LHB current = 10 A, see Figure 7-1 | 15 | V/ns | |||
From VDS < 320 V to VDS < 80 V, RDRV tied to LDO5V, TJ = 25℃, VBUS = 400 V, LHB current = 10 A, see Figure 7-1 | 100 | V/ns | ||||
From VDS < 320 V to VDS < 80 V, RDRV disconnected from LDO5V, RRDRV = 0 Ω, TJ = 25℃, VBUS = 400 V, LHB current = 10 A, see Figure 7-1 | 150 | V/ns | ||||
Maximum GaN FET switching frequency | VNEG rising to > –13.25 V, soft-switched, maximum switching frequency derated for VVDD < 9 V | 3.6 | MHz | |||
FAULTS | ||||||
IT(OC) | DRAIN overcurrent fault – threshold current | 45 | 55 | 65 | A | |
IT(SC) | DRAIN short-circuit fault – threshold current | 65 | 80 | 95 | A | |
di/dtT(SC) | di/dt threshold between overcurrent and short-circuit faults | 150 | A/µs | |||
GaN temperature fault – postive-going threshold temperature | 175 | °C | ||||
GaN temperature fault – threshold temperature hysteresis | 30 | |||||
Driver temperature fault – positive-going threshold temperature | 185 | °C | ||||
Driver temperature fault – threshold temperature hysteresis | 20 | |||||
TEMP | ||||||
Output frequency | 4.5 | 9 | 14 | kHz | ||
Output PWM duty cycle | GaN TJ = 150℃ | 82% | ||||
GaN TJ = 125℃ | 58.5% | 64.6% | 70% | |||
GaN TJ = 85℃ | 36.2% | 40% | 43.7% | |||
GaN TJ = 25℃ | 0.3% | 3% | 6% | |||
IDEAL-DIODE MODE CONTROL | ||||||
VT(3rd) | Drain-source third-quadrant detection – threshold voltage | –0.15 | 0 | 0.15 | V | |
IT(ZC) | Drain zero-current detection – input threshold current | 0℃ ≤ TJ ≤ 125℃ | –0.2 | 0 | 0.2 | A |
–40℃ ≤ TJ ≤ 0℃ | –0.35 | 0 | 0.35 | A |