JAJSS46 November   2023 LMG3612

PRODUCTION DATA  

  1.   1
  2. 特長
  3. アプリケーション
  4. 概要
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Typical Characteristics
  7. Parameter Measurement Information
    1. 6.1 GaN Power FET Switching Parameters
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 GaN Power FET Switching Capability
      2. 7.3.2 Turn-On Slew-Rate Control
      3. 7.3.3 Input Control Pin (IN)
      4. 7.3.4 AUX Supply Pin
        1. 7.3.4.1 AUX Power-On Reset
        2. 7.3.4.2 AUX Under-Voltage Lockout (UVLO)
      5. 7.3.5 Overtemperature Protection
      6. 7.3.6 Fault Reporting
    4. 7.4 Device Functional Modes
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Turn-On Slew-Rate Design
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
        1. 8.4.1.1 Solder-Joint Stress Relief
        2. 8.4.1.2 Signal-Ground Connection
      2. 8.4.2 Layout Example
  10. Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 ドキュメントの更新通知を受け取る方法
    3. 9.3 サポート・リソース
    4. 9.4 Trademarks
    5. 9.5 静電気放電に関する注意事項
    6. 9.6 用語集
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Overview

The LMG3612 is an integrated 650-V 120-mΩ GaN power FET intended for use in switching-power converters. The LMG3612 combines the GaN FET, gate driver, and protection features in a 8-mm by 5.3-mm QFN package.

The 650-V rated GaN FET supports the high voltages encountered in off-line power switching applications. The GaN FET low output-capacitive charge reduces both the time and energy needed for power converter switching and is the key characteristic needed to create small, efficient power converters.

The LMG3612 internal gate driver regulates the drive voltage for optimum GaN FET on-resistance. The internal driver reduces total gate inductance and GaN FET common-source inductance for improved switching performance, including common-mode transient immunity (CMTI). The GaN FET turn-on slew rate can be individually programmed to one of four discrete settings for design flexibility with respect to power loss, switching-induced ringing, and EMI.

The AUX input supply wide voltage range is compatible with the corresponding wide range supply rail created by power supply controllers. Low AUX quiescent currents support converter burst-mode operation critical for meeting government light-load efficiency mandates. Further AUX quiescent current reduction is obtained by placing the device in standby mode with the EN pin.

The IN control pin has high input impedance, low input threshold voltage and maximum input voltage equal to the AUX voltage. This allows the pin to support both low voltage and high voltage input signals and be driven with low-power outputs.

The LMG3612 protection features are under-voltage lockout (UVLO) and overtemperature protection. The overtemperature protection is reported on the open drain FLT output.