JAJSOD0A April   2022  – July 2022 TPS22811

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Switching Characteristics
      1.      14
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Undervoltage Lockout (UVLO and UVP)
      2. 7.3.2 Overvoltage Lockout (OVLO)
      3. 7.3.3 Inrush Current, Overcurrent, and Short-Circuit Protection
        1. 7.3.3.1 Slew Rate (dVdt) and Inrush Current Control
        2. 7.3.3.2 Short-Circuit Protection
        3. 7.3.3.3 Active Current Limiting During Start-Up
      4. 7.3.4 Analog Load Current Monitor
      5. 7.3.5 Overtemperature Protection (OTP)
      6. 7.3.6 Fault Response
      7. 7.3.7 Power-Good Indication (PG)
      8. 7.3.8 Quick Output Discharge (QOD)
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Single Device, Self-Controlled
      2. 8.1.2 Parallel Operation
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Setting Undervoltage and Overvoltage Thresholds
        2. 8.2.2.2 Setting Output Voltage Rise Time (tR)
        3. 8.2.2.3 Setting Power-Good Assertion Threshold
        4. 8.2.2.4 Setting Analog Current Monitor Voltage (IMON) Range
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Transient Protection
    2. 9.2 Output Short-Circuit Measurements
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 サポート・リソース
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6.5 Electrical Characteristics

(Test conditions unless otherwise noted) –40°C ≤ TJ ≤ 125°C, VIN = 12 V, OUT = Open, VEN/UVLO = 2 V, VOVLO = 0 V, RIMON = 600 Ω , dVdT = Open, PGTH = Open, PG = Open. All voltages referenced to GND.
Test Parameter Description MIN TYP MAX UNITS
INPUT SUPPLY (IN)
IQ(ON) IN supply quiescent current 381 470 µA
IQ(OFF) IN supply OFF state current (VSD(F) < VEN < VUVLO(F)) 68 90 µA
ISD IN supply shutdown current (VEN < VSD(F)) 3 25 µA
VUVP(R) IN supply UVP rising threshold 2.44 2.53 2.64 V
VUVP(F) IN supply UVP falling threshold 2.35 2.42 2.55 V
OUTPUT LOAD CURRENT MONITOR (IMON)
GIMON Analog load current monitor gain (IMON : IOUT), IOUT = 1.5 A, IOUT < ILIM 82.9 95.3 107.6 µA/A
Analog load current monitor gain (IMON : IOUT), IOUT = 3 A, IOUT < ILIM 87 95.3 104.5 µA/A
Analog load current monitor gain (IMON : IOUT), IOUT = 4.5 A, IOUT < ILIM 87.6 95.3 103.1 µA/A
Analog load current monitor gain (IMON : IOUT), IOUT = 8 A, IOUT < ILIM 87.7 95.3 102.6 µA/A
Analog load current monitor gain (IMON : IOUT), IOUT = 10 A, IOUT < ILIM 87.8 95.3 102.4 µA/A
SHORT-CIRCUIT PROTECTION (OUT)
IFT Fixed fast-trip current threshold 39.5 A
ON RESISTANCE (IN - OUT)
RON 2.7 ≤ VIN ≤ 4 V, IOUT = 3 A, TJ = 25℃ 6.07 mΩ
4 < VIN ≤ 16 V, IOUT = 3 A, TJ = 25℃ 5.81 mΩ
2.7 ≤ VIN ≤ 16 V, IOUT = 3 A, -40℃ ≤ TJ ≤ 125℃ 8.4 mΩ
ENABLE/UNDERVOLTAGE LOCKOUT (EN/UVLO)
VUVLO(R) EN/UVLO rising threshold 1.176 1.20 1.224 V
VUVLO(F) EN/UVLO falling threshold 1.073 1.09 1.116 V
VSD(F) EN/UVLO falling threshold for lowest shutdown current 0.45 0.75 V
IENLKG EN/UVLO pin leakage current –0.1 0.1 µA
OVERVOLTAGE LOCKOUT (EN/OVLO) 
VOV(R) OVLO rising threshold 1.176 1.20 1.224 V
VOV(F) OVLO falling threshold 1.074 1.09 1.116 V
IOVLKG OVLO pin leakage current (0.5 V < VOVLO < 1.5 V) –0.1 0.1 µA
POWER GOOD INDICATION (PG)
VPGD PG pin voltage while de-asserted. VIN < VUVP(F), VEN < VSD(F), Weak pullup (IPG = 26 μA) 0.66 0.80 V
PG pin voltage while de-asserted. VIN < VUVP(F), VEN < VSD(F), Strong pullup (IPG = 242 μA) 0.78 0.90 V
PG pin voltage while de-asserted, VIN > VUVP(R) 0 0.60 V
IPGLKG PG pin leakage current, PG asserted 3 µA
POWER GOOD THRESHOLD (PGTH)
VPGTH(R) PGTH rising threshold 1.178 1.20 1.224 V
VPGTH(F) PGTH falling threshold 1.071 1.09 1.116 V
IPGTHLKG PGTH leakage current –1 1 µA
OVERTEMPERATURE PROTECTION (OTP)
TSD Thermal Shutdown rising threshold, TJ↑ 154 °C
TSDHYS Thermal Shutdown hysteresis, TJ↓ 10 °C
DVDT
IdVdt dVdt pin internal charging current 1.4 3.45 5.7 µA
QUICK OUTPUT DISCHARGE (OUT)
RQOD Quick Output Discharge Resistance, VEN < VUVLO(F) 455 488 530 Ω