SCDS358B November   2014  – February 2015 TS3A227E

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Simplified Schematic
  5. 5 Revision History
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 I2C Interface Timing Characteristics
    7. 7.7 Timing Diagrams
      1. 7.7.1 Removal
    8. 7.8 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Accessory Configuration Detection
      2. 9.3.2 Optional Manual I2C Control
      3. 9.3.3 Adjustable De-bounce Timings
      4. 9.3.4 Key Press Detection
      5. 9.3.5 Click Pop Noise Reduction
      6. 9.3.6 Power off Noise Removal
      7. 9.3.7 Sleep Mode
      8. 9.3.8 Codec Sense Line
      9. 9.3.9 FM Support
    4. 9.4 Device Functional Modes
      1. 9.4.1 Sleep Mode
      2. 9.4.2 Manual Switch Control
      3. 9.4.3 Manual Switch Control Use Cases
      4. 9.4.4 FM Support Mode
    5. 9.5 Register Maps
    6. 9.6 Register Field Descriptions
      1. 9.6.1  Device ID Register Field Descriptions (Address 00h)
      2. 9.6.2  Interrupt Register Field Descriptions (Address 01h)
      3. 9.6.3  Key Press Interrupt Register Field Descriptions (Address 02h)
      4. 9.6.4  Interrupt Disable Register Field Descriptions (Address 03h)
      5. 9.6.5  Device Settings Field Descriptions (Address 04h)
      6. 9.6.6  Key Press Settings 1 Field Descriptions (Address 05h)
      7. 9.6.7  Key Press Settings 2 Field Descriptions (Address 06h)
      8. 9.6.8  Switch Control 1 Field Descriptions (Address 07h)
      9. 9.6.9  Switch Control 2 Field Descriptions (Address 08h)
      10. 9.6.10 Switch Status 1 Field Descriptions (Address 09h)
      11. 9.6.11 Switch Status 2 Field Descriptions (Address 0Ah)
      12. 9.6.12 Detection Results Field Descriptions (Address 0Bh)
      13. 9.6.13 ADC Output Field Descriptions (Address 0Ch)
      14. 9.6.14 Threshold 1 Field Descriptions (Address 0Dh)
      15. 9.6.15 Threshold 2 Field Descriptions (Address 0Eh)
      16. 9.6.16 Threshold 3 Field Descriptions (Address 0Fh)
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
        1. 10.2.1.1 Standard I2C Interface Details
        2. 10.2.1.2 Write Operations
        3. 10.2.1.3 Read Operations
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Accessory Insertion
        2. 10.2.2.2 Audio Jack Selection
        3. 10.2.2.3 Switch Status
          1. 10.2.2.3.1 Switch Status Diagrams
        4. 10.2.2.4 Key Press Detection
          1. 10.2.2.4.1 Key Press Thresholds
          2. 10.2.2.4.2 System Requirements
          3. 10.2.2.4.3 Key Press Grey Zones
          4. 10.2.2.4.4 Behavior
          5. 10.2.2.4.5 Single Key Press Timing
          6. 10.2.2.4.6 Multiple Key Press Timing
          7. 10.2.2.4.7 Raw Data Key Press Detection
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example (QFN)
    3. 12.3 Layout Example (DSBGA)
  13. 13Device and Documentation Support
    1. 13.1 Trademarks
    2. 13.2 Electrostatic Discharge Caution
    3. 13.3 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range referenced with respect to GND (unless otherwise noted)(1)
MIN MAX UNIT
Input Voltage VDD –0.3 5 V
SDA, SCL, INT, MIC_PRESENT –0.3 VDD + 0.5 V
TIP –3.3 VDD + 0.5 V
DET_TRIGGER –2.2 VDD + 0.5 V
GND_SENSE, RING2, SLEEVE, RING2_SENSE, SLEEVE_SENSE, MICP, GNDA –0.3 3.6(2) and VDD + 0.5 V
ON-state switch current Combined continuous current through R2GNDFET and SLV GNDFET 500 mA
Continuous current through R2DFET and SLV DFET 50
Continuous current through S1 20
Continuous current through S2 20
Continuous current through S3PR 50
Continuous current through S3PS 50
Continuous current through S3GR 100
Continuous current through S3GS 100
Operating ambient temperature range –40 85 °C
Tstg Storage temperature range –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) This rating is exclusive and the voltage on the pins must not exceed either 3.6 and VDD. E.g. if VDD = 4.5 V the voltage on the pin must not exceed 3.6 V and if VDD is = 2.5 V the voltage on the pin must not exceed 3.0 V.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), ESD stress voltagenew note #1 to the ESD Ratings table and combined MIN MAX column to VALUE (1)(2) ±2000 V
Charged device model (CDM), ESD stress voltage(1)(3) ±500 V
Contact discharge model (IEC) ESD stress voltage on TIP, DET_TRIGGER, RING2_SENSE, SLEEVE_SENSE, RING2, SLEEVE(1) ±8000 V
(1) Electrostatic Discharge (ESD) to measure device sensitivity and immunity to damage caused by assembly line electrostatic discharges into the device
(2) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(3) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VDD Power supply voltage range 2.5 4.5 V
VI Digital input voltage range SDA, SCL 0 VDD V
DET_TRIGGER –2.2 VDD V
VIO Input/output voltage range RING2_SENSE, SLEEVE_SENSE, RING2, SLEEVE, GND_SENSE, MICP 0 3.3(1) and VDD V
TIP –3 VDD
VO Output voltage range INT, MIC_PRESENT 0 VDD V
VIH Input logic high SDA, SCL 1.2 VDD V
DET_TRIGGER 0.65 × VDD VDD V
VIL Input logic low SDA, SCL 0 0.4 V
DET_TRIGGER 0 0.4 × VDD V
TA Operating ambient temperature –40 85 °C
(1) This rating is exclusive and the voltage on the pins must not exceed either 3.3 and VDD. E.g. if VDD = 4.5 V the voltage on the pin must not exceed 3.3 V and if VDD is = 2.5 V the voltage on the pin must not exceed 2.5 V.

7.4 Thermal Information

THERMAL METRIC(1) TS3A227E TS3A227E UNIT
RTE YFF
16 PINS 16 PINS
RθJA Junction-to-ambient thermal resistance 45.9 77.9 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 52.6 0.6
RθJB Junction-to-board thermal resistance 21.2 12.5
ψJT Junction-to-top characterization parameter 0.9 2.3
ψJB Junction-to-board characterization parameter 21.2 12.5
RθJC(bot) Junction-to-case (bottom) thermal resistance 4.3 -
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

Unless otherwise noted the specification applies over the VDD and ambient operating temperature range.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY VOLTAGE
VDD Supply voltage 2.5 3.3 4.5 V
IDD Quiescent current No accessory inserted. I2C bus inactive(1)
VDD = 2.5 V to 4.5 V		 0.5 10 µA
Manual switch control = ’1’ , I2C bus inactive,(1)
VDD = 2.5 V to 4.5 V, Depletion FETs on		 7 15 µA
Manual switch control = ’1’ , I2C bus inactive,
VDD = 2.5 V to 4.5 V Depletion FETs off		 20 40 µA
3-pole accessory inserted.
I2C bus inactive(1), FM Support = ’0’
VDD = 2.5 V to 4.5 V		 11 20 µA
3-pole accessory inserted.
I2C bus inactive,(1) FM Support = ’1’
VDD = 2.5 V to 4.5 V		 25 45 µA
4-pole Accessory inserted.
I2C bus inactive,(1) VDD = 2.5 V to 4.5 V		 25 40 µA
4-pole Accessory inserted.
KP detection enabled
I2C bus inactive,(1) VDD = 2.5 V to 4.5 V		 30 45 µA
IDD_1.8 Quiescent current addition from using a 1.8 V I2C bus.(3) No accessory inserted.
I2C bus inactive at 1.8 V,(2)
VDD = 2.5 V to 4.5 V 		1 8 µA
SWITCH RESISTANCE
RR2GNDFT RING2 GNDFET on resistance (DSBGA Package) VDD = 3.3 V, VGND = 0V,
IGNDA = 75 mA		 40 85 mΩ
RING2 GNDFET on resistance (QFN Package) 60 95
RSLVGNDFT SLEEVE GNDFET on resistance (DSBGA Package) 40 85
SLEEVE GNDFET on resistance (QFN Package) 60 95
RS3PS S3PS on resistance VDD = 3.3 V,
VSLEEVE_SENSE/RING2_SENSE = 0 V to 2.7 V,
IMICP = ±10 mA		 3 6.5 Ω
RS3PR S3PR on resistance 3 6.5
RS3GS S3GS on resistance VDD = 3.3 V,
VSLEEVE_SENSE/RING2_SENSE = 0 V to 2.7 V,
IGND_SENSE = ±75 mA		 0.5 1 Ω
RS3GR S3GR on resistance 0.5 1
RS1 Switch 1 on resistance VDD = 3.3 V, IGND = 10 mA 15 30 Ω
RS2 Switch 2 on resistance 15 30
RR2DFET RING2 depletion FET on resistance 75 150 Ω
RSLVDFET SLEEVE depletion FET on resistance 75 150
SWITCH LEAKAGE CURRENT
IOFF RING2 pin off leakage VIN = 0 V to 3.3 V, VDD = 3.3 V 1 µA
SLEEVE pin off leakage 1
RING2_SENSE pin off leakage 1
SLEEVE_SENSE pin off leakage 1
MICP pin off leakage 1
GND_SENSE pin off leakage 1
ION S2PS, S3PR, S3GS, S3GR on leakage VSLEEVE/RING2 = 0V, VDD = 3.3 V 1 µA
SWITCH TIMING
tOFF Turn off time for S3PS, S3PR, S3GS, S3GR VDD = 2.5 V, 3.3 V, 4.5 V,
RL = 300 Ω, CL = 50 pF
VSLEEVE_SENSE/RING2_SENSE = 2.5 V (VDD = 2.5 V),
3.3 V (VDD = 3.3 V, VDD = 4.5 V) 		5 µs
Turn off time for S1, S2, RING2 GNDFET, SLEEVE GNDFET VDD = 2.5 V, 3.3 V, 4.5 V
RPU = 1500 Ω, CL = 50 pF
VPU = 2.5 V (VDD = 2.5 V),
3.3 V (VDD = 3.3 V, VDD = 4.5 V) 		5 µs
Turn off time for RING2 DFET and SLEEVE DFET VDD = 2.5 V, 3.3 V, 4.5 V
RPU = 1500 Ω, CL = 50 pF
VPU = 2.5 V (VDD = 2.5 V),
3.3 V (VDD = 3.3 V, VDD = 4.5 V) 		500 µs
tON Turn on time for S3PS, S3PR, S3GS, S3GR VDD = 2.5 V, 3.3 V, 4.5 V
RL = 300 Ω, CL = 50 pF
VSLEEVE_SENSE/RING2_SENSE = 2.5 V (VDD = 2.5 V),
3.3 V (VDD = 3.3 V, VDD = 4.5 V) 		1 µs
Turn on time for S1, S2, RING2 GNDFET, SLEEVE GNDFET VDD = 2.5 V, 3.3 V, 4.5 V
RPU = 1500 Ω, CL = 50 pF
VPU = 2.5 V (VDD = 2.5 V),
3.3 V (VDD = 3.3 V, VDD = 4.5 V) 		35 µs
Turn on time for RING2 DFET and SLEEVE DFET VDD = 2.5 V, 3.3 V, 4.5 V
RPU = 1500 Ω, CL = 50 pF
VPU = 2.5 V (VDD = 2.5 V),
3.3 V (VDD = 3.3 V, VDD = 4.5 V) 		1 µs
DIGITAL I/O
VOL MIC_PRESENT low level output voltage VDD = 3.3 V, IOL = 10 mA 0 0.4 V
INT low level output voltage 0 0.4
SDA low level output voltage VDD = 3.3 V, IOLMAX = 3 mA 0 0.4
VIH Input logic high SDA, SCL 1.2 VDD V
DET_TRIGGER VDD x 0.65 VDD
VIL Input logic low SDA, SCL 0 0.4
DET_TRIGGER 0 VDD x 0.4
RPU/DT Internal DET_TRIGGER pull-up resistance VDD = 3.3 V, I/DET_TRIGGER = 1 µA 0.5 1 1.85 MΩ
DYNAMIC CHARACTERISTICS
PSR217 Power supply rejection VDD = 3.3 V ± 200 mVPP, f = 217 Hz, RL at RING2= 50 Ω –95 –120 dB
PSR1k VDD = 3.3 V ± 200 mVPP, f = 1 kHz, RL at RING2= 50 Ω –85 –110
PSR20k VDD = 3.3 V ± 200 mVPP, f = 20 kHz, RL at RING2= 50 Ω –70 –90
ISOS3 SLEEVE_SENSE or RING2_SENSE to MICP Isolation VIN = 200 mVPP, f = 20 Hz – 20 kHz, RL = 50 Ω –90 dB
SEPS3 SLEEVE_SENSE to RING2_SENSE Separation VIN = 200 mVPP, f = 20 Hz – 20 kHz, RL = 50 Ω –75 dB
BW Bandwidth through GNDFETs VIN = 60 mVPP, IBIAS = 10 mA 120 150 MHz
THD200 MICP to RING2_SENSE or SLEEVE_SENSE total harmonic distortion VIN = 1.5 V + 200 mVPP, f = 20 Hz – 20 kHz,
RS = 600 Ω, RL = 600 Ω		 0.003 %
THD500 VIN = 1.5 V + 500 mVPP, f = 20 Hz – 20 kHz,
RS = 600 Ω, RL = 600 Ω		 0.002%
SNR MICP to RING2_SENSE or SLEEVE_SENSE signal to noise ratio VIN = 1 VRMS, f = 20 Hz – 20 kHz,
RS = 600 Ω, RL = 600 Ω		 –90 –110 dB
tDET Detection sequence duration Time between DET_TRIGGER transition from high to low and INT transition from high to low. Default 90 ms insertion debounce. 175 210 ms
Tpower-up Power up time Power-up time Time from VDD > 2.5 V till I2C communication is ready 20 25 ms
tREMOVAL Removal wait period Time between DET_TRIGGER transition from low to high and RING2/SLEEVE DFETs turning on 50 65 ms
(1) The I2C bus is inactive if both the SDA and SCL lines are tied to VDD.
(2) The I2C bus is inactive if both the SDA and SCL lines are tied to 1.8 V.
(3) If the I2C bus is operating at 1.8 V the IDD_1.8 current number will be in addition to the other current consumption numbers specified.

7.6 I2C Interface Timing Characteristics

Unless otherwise noted the specification applies over the VDD and ambient operating temperature range
PARAMETER STANDARD MODE I2C BUS FAST MODE I2C BUS UNIT
MIN MAX MIN MAX
fscl I2C clock frequency 0 100 0 400 kHz
tsch I2C clock high time 4 0.6 µs
tscl I2C clock low time 4.7 1.3 µs
tsp I2C spike time 50 50 ns
tsds I2C serial data setup time 250 100 ns
tsdh I2C serial data hold time 0 0 ns
ticr I2C input rise time 1000 21 300 ns
ticf I2C input fall time 300 21 300 ns
tocf I2C output fall time; 10 pF to 400 pF bus 300 20 + 0.1 Cb 300 µs
tbuf I2C bus free time between Stop and Start 4.7 1.3 µs
tsts I2C Start or repeater Start condition setup time 4.7 0.6 µs
tsth I2C Start or repeater Start condition hold time 4 0.6 µs
tsps I2C Stop condition setup time 4 0.6 µs
tvd(data) Valid data time; SCL low to SDA output valid 3.45 0.3 0.9 µs
tvd(ack) Valid data time of ACK condition; ACK signal from SCL low to SDA (out) low 3.45 0.3 0.9 µs
Cb I2C bus capacitive loading 0 400 0 400 pF

7.7 Timing Diagrams

td_3_pole_accssry_scds358.gif
A. (This is the point that DET_TRIGGER has stopped glitching and is fully low. The de-bounce time of 90 ms starts from the point that the pin is constantly below the VIL level. Any time the DET_TRIGGER pin cross the VIH level the de-bounce timer will restart.
B. Point B is the end of the insertion de-bounce time and the beginning of accessory detection.
C. Detection has completed at this point. The switches will be routed before the INT pin is pulled low.
D. INT is cleared after the host reads the interrupt register.
E. The headset is removed here. The switch states will change immediately and INT will be pulled low.
F. After a 50 ms removal de-bounce timer the TS3A227E will go back into sleep mode if manual switch control is not enabled
Figure 1. 3-Pole Accessory
td_4_pole_accssry_scds358.gif
A. This is the point that DET_TRIGGER has stopped glitching and is fully low. The de-bounce time of 90 ms starts from the point that the pin is constantly below the VIL level. Any time the DET_TRIGGER pin cross the VIH level the de-bounce timer will restart.
B. Point B is the end of the insertion de-bounce time and the beginning of accessory detection.
C. Detection has completed at this point. The switches will be routed before the INT and MIC_PRESENT pins are pulled low.
D. INT is cleared after the host reads the interrupt register.
E. The headset is removed here. The switch states will change immediately and INT will be pulled low. The MIC_PRESENT pin will be released.
F. After a 50 ms removal de-bounce timer the TS3A227E will go back into sleep mode if manual switch control is not enabled
Figure 2. 4-Pole Accessory

7.7.1 Removal

A removal event will interrupt any on-going process in the TS3A227E. The following diagram depicts how the device “jumps” during a removal.

If the removal event occurs during the insertion de-bounce period the TS3A227E will jump to the (A) point of the diagram depicted by the green arrow and line.

Any time after point (B) has been reached and the accessory is removed the device jumps to point (E), which includes key press detection. Under Manual Switch Control the switch states will not change.

td_removal_accssry_scds358.gifFigure 3. Removal Timing During Insertion

7.8 Typical Characteristics

D002_SCDS358.gifFigure 4. S3PX THD