The device has ±3-A peak drive strength and is suitable for driving IGBT/SiC. The driver features an important safety function wherein, when the input pins are in floating condition, the output is held in LOW state. The driver has rail-to-rail output by implementing an NMOS pull-up with intrinsic bootstrap gate drive. Under DC conditions, a PMOS is used to keep OUT tied to VDD as shown in the figure. The low pullup impedance of the NMOS results in strong drive strength during the turn-on transient, which shortens the charging time of the input capacitance of the power semiconductor and reduces the turn on switching loss.

Figure 6-4 Gate Driver Output Stage