JAJS467F December   2008  – April 2019 TPS61175

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      概略回路図
  4. 4 改訂履歴
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Switching Frequency
      2. 7.3.2 Soft Start
      3. 7.3.3 Overcurrent Protection
      4. 7.3.4 Enable and Thermal Shutdown
      5. 7.3.5 Undervoltage Lockout (UVLO)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Minimum ON Time and Pulse Skipping
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Custom Design with WEBENCH Tools
        2. 8.2.2.2  Determining the Duty Cycle
        3. 8.2.2.3  Selecting the Inductor
        4. 8.2.2.4  Computing the Maximum Output Current
        5. 8.2.2.5  Setting Output Voltage
        6. 8.2.2.6  Setting the Switching Frequency
        7. 8.2.2.7  Setting the Soft-Start Time
        8. 8.2.2.8  Selecting the Schottky Diode
        9. 8.2.2.9  Selecting the Input and Output Capacitors
        10. 8.2.2.10 Compensating the Small Signal Control Loop
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
  11. 11デバイスおよびドキュメントのサポート
    1. 11.1 デバイス・サポート
      1. 11.1.1 デベロッパー・ネットワークの製品に関する免責事項
    2. 11.2 開発サポート
      1. 11.2.1 WEBENCHツールによるカスタム設計の作成
    3. 11.3 ドキュメントの更新通知を受け取る方法
    4. 11.4 コミュニティ・リソース
    5. 11.5 商標
    6. 11.6 静電気放電に関する注意事項
    7. 11.7 Glossary
  12. 12メカニカル、パッケージ、および注文情報

6.5 Electrical Characteristics

FSW = 1.2 MHz (Rfreq = 80 kΩ), VIN = 3.6 V, TA = –40°C to +85°C, typical values are at TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
VIN Input voltage range 2.9 18 V
IQ Operating quiescent current into Vin Device PWM switching without load 3.5 mA
ISD Shutdown current EN=GND 1.5 μA
VUVLO Under-voltage lockout threshold 2.5 2.7 V
Vhys Under-voltage lockout hysteresis 130 mV
ENABLE AND REFERENCE CONTROL
Venh EN logic high voltage VIN = 2.9 V to 18 V 1.2 V
Venl EN logic low voltage VIN = 2.9 V to 18 V 0.4 V
VSYNh SYN logic high voltage 1.2
VSYNl SYN logic low voltage 0.4 V
Ren EN pull down resistor 400 800 1600 kΩ
Toff Shutdown delay, SS discharge EN high to low 10 ms
VOLTAGE AND CURRENT CONTROL
VREF Voltage feedback regulation voltage 1.204 1.229 1.254 V
IFB Voltage feedback input bias current 200 nA
Isink Comp pin sink current VFB = VREF + 200 mV, VCOMP = 1 V 50 μA
Isource Comp pin source current VFB = VREF –200 mV, VCOMP = 1 V 130 μA
VCCLP Comp pin clamp voltage High Clamp, VFB = 1 V
Low Clamp, VFB = 1.5 V		 3
0.75		 V
VCTH Comp pin threshold Duty cycle = 0% 0.95 V
Gea Error amplifier transconductance 240 340 440 μmho
Rea Error amplifier output resistance 10 MΩ
fea Error amplifier crossover frequency 500 KHz
FREQUENCY
fS Oscillator frequency Rfreq = 480 kΩ 0.16 0.21 0.26 MHz
Rfreq = 80 kΩ 1.0 1.2 1.4
Rfreq = 40 kΩ 1.76 2.2 2.64
Dmax Maximum duty cycle VFB = 1 V, Rfreq = 80 kΩ 89% 93%
VFREQ FREQ pin voltage 1.229 V
Tmin_on Minimum on pulse width Rfreq = 80 kΩ 60 ns
POWER SWITCH
RDS(ON) N-channel MOSFET on-resistance VIN = VGS = 3.6 V
VIN = VGS = 3.0 V		 0.13
0.13		 0.25
0.3		 Ω
ILN_NFET N-channel leakage current VDS = 40 V, TA = 25°C 1 μA
OC, OVP AND SS
ILIM N-Channel MOSFET current limit D = Dmax 3 3.8 5 A
ISS Soft start bias current Vss = 0 V 6 μA
THERMAL SHUTDOWN
Tshutdown Thermal shutdown threshold 160 °C
T hysteresis Thermal shutdown threshold hysteresis 15 °C