JAJSD34C April 2017 – April 2018 CSD88599Q5DC
PRODUCTION DATA.
PARAMETER | CONDITIONS | MIN | MAX | UNIT |
---|---|---|---|---|
Voltage | VIN to PGND | –0.8 | 60 | V |
VSW to PGND | –0.3 | 60 | ||
GH to SH | –20 | 20 | ||
GL to PGND | –20 | 20 | ||
Pulsed current rating, IDM(2) | 400 | A | ||
Power dissipation, PD | 12 | W | ||
Avalanche energy, EAS | High-side FET, ID = 95 A, L = 0.1 mH | 448 | mJ | |
Low-side FET, ID = 95 A, L = 0.1 mH | 448 | |||
Operating junction temperature, TJ | –55 | 150 | °C | |
Storage temperature, Tstg | –55 | 150 | °C |