JAJSVA1F May   2012  – August 2024 TPS65131-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Power Conversion
      2. 7.3.2 Control
      3. 7.3.3 Output Rails Enable or Disable
      4. 7.3.4 Load Disconnect
      5. 7.3.5 Soft Start
      6. 7.3.6 Overvoltage Protection
      7. 7.3.7 Undervoltage Lockout
      8. 7.3.8 Overtemperature Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Power-Save Mode
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 TPS65131-Q1 With VPOS = 10.5V, VNEG = –10V
      2. 8.2.2 Design Requirements
      3. 8.2.3 Detailed Design Procedure
        1. 8.2.3.1 Programming the Output Voltage
          1. 8.2.3.1.1 Boost Converter
          2. 8.2.3.1.2 Inverting Converter
          3. 8.2.3.1.3 Inductor Selection
        2. 8.2.3.2 Capacitor Selection
          1. 8.2.3.2.1 Input Capacitor
          2. 8.2.3.2.2 Output Capacitors
        3. 8.2.3.3 Rectifier Diode Selection
        4. 8.2.3.4 External P-MOSFET Selection
        5. 8.2.3.5 Stabilizing the Control Loop
          1. 8.2.3.5.1 Feedforward Capacitors
          2. 8.2.3.5.2 Compensation Capacitors
      4. 8.2.4 Analog Supply Input Filter
        1. 8.2.4.1 RC-Filter
        2. 8.2.4.2 LC-Filter
      5. 8.2.5 Thermal Information
      6. 8.2.6 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 ドキュメントの更新通知を受け取る方法
    2. 9.2 サポート・リソース
    3. 9.3 商標
    4. 9.4 静電気放電に関する注意事項
    5. 9.5 用語集
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Mechanical Data
    2. 11.2 Tape and Reel Information

10 Revision History

Changes from Revision E (March 2017) to Revision F (August 2024)

  • 「製品情報」を更新Go

Changes from Revision D (October 2014) to Revision E (March 2017)

  • セクション 1の箇条書きのテキストを「... 認定済み ...」から「... テスト ガイダンス ...」に変更し、HBM 分類レベルを「H2」から「H1C」に変更Go
  • Moved Tstg spec to the Abs Max Ratings table per new data sheet standardGo
  • Changed "Handling Ratings" to "ESD Ratings" and HBM Value From "±2 kV" to "±1000 V".Go
  • Changed Electrical Characteristics condition statement to "This specification applies over the full recommended input voltage range VI = 2.7 V to 5.5 V and over the temperature range TJ = –40°C to 125°C unless otherwise noted. Typical values apply for VI = 3.6 V and TJ = 25°C."Go
  • Changed The specification applies over the full recommended input voltage range VI = 2.7 V to 5.5 V and over the temperature range TJ = –40 °C to 125°C unless otherwise noted. Typical values apply for VI = 3.6 V and TJ = 25°Go
  • Added Section 8.2.4 description Go

Changes from Revision C (March 2014) to Revision D (October 2014)

  • データシートを新しいフォーマットにするための全体的な編集上の変更Go
  • 最大効率 89% を 91% に、81% を 85% に変更Go
  • 「最小 1.25MHz」を削除Go
  • シャットダウン電流 1μA を 0.2µA (標準値) に変更Go
  • Added Thermal Pad to Absolute Maximum Ratings. Added min./max. values where missingGo
  • Added V(VIN), V(INN), VNEG, VPOS, V(ENN), V(ENP), V(PSN) to Recommended Operating Conditions tableGo
  • Changed symbol names to JEDEC complianceGo
  • Added frequency and duty cycles to Switching Characteristics table. Removed from Electrical Characteristics tableGo
  • Added Rectifier Diode Selection GuideGo
  • Added P-MOSFET Selection GuideGo

Changes from Revision B (February 2013) to Revision C (March 2014)

  • 「-40℃～125℃の接合部温度範囲にわたって電気的特性をテスト済み」を追加Go
  • 「製品情報」表を追加Go
  • Deleted TA table rowGo
  • Changed INN to VINN, added pin names VIN and INNGo
  • Added pin name VPOSGo
  • Added pin name VNEGGo
  • Changed INP to VINP, added pin name INPGo
  • Changed "between pins OUTN to VINN" to "between pins OUTN to INN"Go
  • Added operating junction temperatureGo
  • Added "In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may require derating. See Section 8.2.5 for details."Go
  • Deleted "virtual" from "Operating virtual junction temperature range"Go
  • Changed Electrical Characteristics condition statement to "This specification applies over the full recommended input voltage range VI = 2.7 V to 5.5 V and over the temperature range TJ = TA = –40°C to 125°C unless otherwise noted. Typical values apply for VI = 3.6 V and TJ = TA = 25°C."Go
  • Changed ILIM,min = 1800 mA to 1700 mAGo
  • Deleted VPOS = 5 V (105°C) rowGo
  • Changed rDS(on)P,max (VPOS = 5 V) = 300 mΩ to 390 mΩGo
  • Changed rDS(on)P,max (VPOS = 10 V) = 200 mΩ to 230 mΩGo
  • Changed ILIMP,min = 1800 mA to 1700 mAGo
  • Changed ILIMP,max = 2200 mA to 2250 mAGo
  • Added TA = –40°C to 85°CGo
  • Changed minimum f = 1250 kHz to 1150 kHzGo
  • Editorially updated Block DiagramGo
  • Changed "The maximum recommended junction temperature (TJ) of the TPS65131-Q1 is 125°C." to "The recommended device junction temperature range, TJ, is -40°C to 125°C."Go
  • Changed RθJA = 37.8°C/W to RθJA = 34.1°C/WGo
  • Changed "Specified regulator operation is ensured to a maximum ambient temperature TA of 105°C." to "The recommended operating ambient temperature range for the device is TA = –40°C to 105°C."Go
  • Changed "Therefore, the maximum power dissipation is about 1058 mW" to "Use Equation 13 to calculate the maximum power dissipation, PDmax, as a function of TA. In this equation, use TJ = 125°C to operate the device within the recommended temperature range, use TJ = T(TS) to determine the absolute maximum threshold when the device might go into thermal shutdown."Go
  • Changed Equation 13 Go

Changes from Revision A (November 2012) to Revision B (February 2013)

  • CDM ESD 定格を C3B から C4B に変更Go

Changes from Revision * (May 2012) to Revision A (November 2012)

  • デバイスがプレビューから量産に移行Go
  • Added thermal information table values.Go
  • Added VPOS = 5 V (105°C) row and values to Electrical Characteristics table.Go