DRV8323RS

The DRV8323RS is a smart gate three-phase BLDC motor driver that integrates multiple features to provide accurate gate drive control, achieve safe operation, and a small solution size. The DRV8323RS integrates three half-bridge gate drivers, a charge pump to drive the high-side N-channel MOSFETs, and a linear regulator to drive the low-side N-Channel MOSFETs. These half bridges are controlled with a smart gate drive architecture that is capable of sourcing up to 1 A and sinking up to 2 A to the MOSFET gates for accurate control. The smart gate technology also allows the motor driver to dynamically adjust the strength of the gate drive output to optimize efficiency and reduce the external passive components required for the gate drive circuit. In addition to the gate drivers, the DRV8323RS integrates three current shunt amplifiers for each of the three phases for over-current protection (OCP). The DRV8323RS settings can be programmed through SPI while the gate drivers take PWM inputs from a MCU.

The DRV8323RS has a wide input voltage range of 6-60 V, which means that it is capable of operating over the full input voltage range of the reference design. This device incorporates a 600 mA, 60 V simple switcher buck converter typically used to power MCU’s or other low power devices. The integrated buck regulator switches at 700 kHz and requires an external inductor, diode, and external capacitors. The buck converter also has a wide input voltage range, which allows it to operate over the full design input voltage range.

DRV8847

The DRV8847 is a dual H-bridge motor drive that is capable of driving single BDC motors, dual BDC motors, bipolar stepper motors, and solenoid valves depending on the configuration used and selected settings. The device is comprised of four individual half-bridges with integrated N-Ch MOSFETs that each have an R_DS(ON) of 1000 mΩ. Depending on the configuration of the DRV8847, the half-bridges can be driven separately, as individual H-bridges, or as a combined dual H-bridge depending on the settings selected through I2C or through external resistors depending on the variant. Each H-bridge is capable of driving up to 1 A individually or 2 A together under ambient conditions. Additionally, each H-bridge has pins to read the voltage across an external current shunt for over-current protection. A MCU or processors can be used to provide the required input PWM signals to the DRV8847. As for powering the device itself, the DRV8847 is capable of taking an input voltage range of 2.7-18 V and has a 1.7 μA sleep mode for high efficiency designs.

TPS62840

The TPS62840 is the latest low-voltage, low I_Q synchronous step-down DC-DC converter optimized for high-efficiency and a small solution size. The device integrates both the high- and low-side N-Ch MOSFETs with varying R_DS(ON) values estimated between 200 mΩ and 650 mΩ. The integrated MOSFETs are capable of delivering up to 750mA in output current. This highly efficient device also has a reported operating quiescent current (I_Q) of 60 nA and is able to maintain 80% efficiency at a 1-μA output current, a light load condition.

The TPS62840 family is capable of taking a 1.8V – 6.5V input voltage and stepping down to 0.8V – 3.4V output voltage. Depending on the variant of the device selected, an external resistor is used to select the output voltage from 16 options. In order to ensure the efficiency of the design, the compensation network was integrated into the device. Therefore, it has specifically been designed to operate with an external 2.2 μH inductor and external 10 μF capacitor that allow for the reported ±2% output voltage accuracy specification. Certain device packages also include the additional run/stop feature, which allows the device to stop regulating output without turning off completely, meaning that it won’t have to go through startup conditions again. This is specifically useful for taking noise-sensitive measurements because the switching noise can be temporarily eliminated while a measurement is taken. The output capacitor holds the voltage rail up for the short duration of the measurement and then the device goes back to switching.

TPS7A02

The TPS7A02 is the latest low-voltage, ultralow I_Q Low-Dropout Regulator (LDO) that is optimized for solution size and efficiency. The family of devices is capable of sourcing 200mA, and is specified to have a maximum 204 mV dropout for the 3.3 V output variant. Supporting an efficient design, the ultralow I_Q of the device is typically 35 nA and is partially achieved with the help of the smart enable pull-down. This low-I_Q allows the device to be targeted for battery-powered applications where efficiency, especially in the off-state, is the most important parameter for maintaining the life of the battery.

To minimize solution size and remove extra external components, the LDO comes in fixed output voltage variants that range from 0.8-5.0 V. The device does require external input and output capacitors. However, the device only requires a minimum capacitance of 0.1 μF for stability and is specified to have a maximum of 1.5% deviation from the set output voltage. The TPS7A02 comes in three potential package options including an X2SON, a DSBGA, and a SOT-23, with the DSBGA as the smallest at 0.65 mm x 0.65 mm for the most size critical applications.

LM5122

The LM5122 is a wide-input synchronous step-up (boost) controller that is capable of utilizing an input voltage range of 3-65 V and has a maximum output voltage of 100 V. In this design, this device is used to step-up battery level voltages to 14 V as a pre-boost for the DRV8847 ICs and solenoid valves. However, since the design includes an input voltage range as high as 28 V, the largest benefit of this boost controller is the highly efficient bypass mode. For input voltages equal to or higher than the set output voltage this device uses an internal charge pump, tied to the input voltage, to keep the gate of the series MOSFET high. This results in an efficient bypass of the LM5122 with the main losses from the R_DS(ON) of the MOSFET.

In addition to the bypass mode, the device has many other features and specifications that make it an ideal choice. The use of external MOSFETs with this design allows for flexibility in finding a compromise between cost and efficiency that is driven by the needs of the specific design. To complement the use of selectable external MOSFETs, the integrated gate drivers are capable of sinking and sourcing up to 3 A. Additionally, the switching frequency of the boost is adjustable through an external resistor up to 1 MHz. The LM5122 is also a peak-current-mode control device that takes a differential current sense input from a series sense resistor.

LMR33630

The LMR33630 is a simple switcher 3 A synchronous DC/DC step-down converter that is optimized for solution size and efficiency. The device can take a wide input voltage range of 3.8-36 V and is capable of supply an output voltage between 1-24 V. The integrated power MOSFETs have R_DS(ON) values <100 mΩ, which help with achieving high efficiencies. The switching frequency of the converter is selectable between three options based on the variant of the device selected. A switching frequency of 400 kHz was selected for this design to get the highest possible efficiency while only incurring a small increase in solution size.

The LMR33630 also integrates most of the passive components required for most settings, which allows for a smaller solution size. However, it does require both a Vcc capacitor and bootstrap capacitor, in addition to the external inductor, input capacitors, output capacitors, and feedback network for output voltage regulation. The device comes in an HSOIC package that is 5 mm x 4 mm or a VQFN package that is 3 mm x 2 mm.

TMP1075

The TMP1075 temperature sensor is an updated replacement for the LM75 or TMP75, which are industry-standard digital temperature sensors. There is an SOIC and a VSSOP package that are pin-to-pin compatible with the TMP75 and LM75 for easy compatibility. The TMP1075 does also offer a new WSON package that is 2mm x 2mm that can save significantly on the solution size over the previous generation devices. Software from existing designs using the LM75 and TMP75 is also compatible with the new temperature sensor.

This digital temperature sensor can communicate over I2C or SMBus interfaces and can support up to 32 unique device addresses to accommodate a wide variety of designs. The device is capable of running on a wide voltage supply range of 1.7- 5.5 V and has a low average current consumption of 2.7 μA. Additionally, the temperature sensor has ±1 ^oC accuracy over a wide range, with a maximum of ±2 ^oC over the full temperature range. The integrated analog-to-digital converter (ADC) is a 12-bit ADC that provides a 0.0625 ^oC temperature resolution. In addition to these specifications, the TMP1075 also includes an open-drain Alert pin, the threshold of which can be configured using I2C or SMBus communication. Apart from its size and accuracy, the device is also a cost-effective solution for many applications that are able to tolerate the accuracy range.

MSP430FR2155

The MSP430FR2155 is a part of the MSP430 MCU value line portfolio of ultra-low power, low-cost devices for sensing and measurement applications. The device has an integrated 12-channel, 12-bit ADC, two enhanced comparators, and a 32 KB nonvolatile FRAM. This MSP430 is able to operate off of a supply voltage between 1.8-3.6 V and has optimized low power modes to reduce the power consumption. When active, the device draws 142 μA/MHz, at an input voltage of 3 V, while the device will draw around 1.43 μA in standby mode and 42 nA in shutdown mode. In addition to low power consumption, internal voltage references allow for solution size savings and accurate ADC readings.

There are many resources available to support quick development on the MSP430FR2155 including example software, documentation, and trainings. The MSP430FR2355 LaunchPad development kit is a useful platform for developing code that can then be ported to a final design. The MSP430s also include several libraries of functions that streamline the software development.

LM74700-Q1

The LM74700-Q1 is a Low I_Q reverse battery protection ideal diode controller, which drives an external N-Ch MOSFET as an ideal diode rectifier to achieve low power loss and regulating the voltage drop at 20 mV from input to output. Specifically, the device is a reverse polarity protection IC that has integrated comparators to measure the voltage at the cathode (output) and anode (input) pins of the device. If the cathode voltage goes higher than the anode voltage, the device disables the gate of the MOSFET at a maximum rate of 2.3 A, which disconnects the downstream ICs and prevents reverse current flow. To enable the MOSFET, a charge pump is also integrated in the design and uses an external capacitor as part of the charge pump. While the device is operational, it sources 80 μA while it only sources 1 μA in shutdown mode.

Originally designed for automotive applications, the LM74700-Q1 is capable of operating with a wide input voltage range of 3.2-65 V, and is able to handle up to -65 V of reverse voltage. The device also has an enable pin that can be used to externally enable and disable the LM74700-Q1 for precise control beyond the internal output voltage and input voltage comparator. The LM74700-Q1 comes in a small SOT-23 package, which allows for small form factor designs, but does require the external MOSFET as previously mentioned.

CSD88584Q5DC

The CSD88584Q5DC is a 40-V Half-Bridge NexFET Power Block device that integrates two Power N-Ch MOSFETs into a single 5 mm x 6 mm package with pins for gate drive signals and a sense pin for the switch node. These devices were specifically designed to be coupled with half-bridge gate drivers that are integrated with motor driver ICs. The MOSFETs have R_DS(ON) values below 2 mΩ to minimize the power loss during motor operation and are well rated for the maximum input voltage expected in the design. To help mitigate any potential thermal issues, these devices also have an exposed metal pad on the top side that can be connected to a heat sink for optimal heat dissipation. These MOSFETs have also been optimized to operate at switching frequencies between 5 kHz and 50 kHz, which is the typical switching frequency range for BLDC motors.

CSD18543Q3A

The CSD18543Q3A is a single 60-V N-Ch NexFET Power MOSFET optimized for solution size and power density. The device comes in a 3.3 mm x 3.3 mm package and has an R_DS(ON) below 12 mΩ to help limit power loss and mitigate potential thermal concerns. The device is rated to handle a maximum continuous current of 12 A, which is double the input current expected in the design. The total gate charge of 11.1 nC and typical gate drive voltage of 10 V are also beneficial specifications, especially given that this device is paired with the gate drive of the LM5122, which is capable of driving to those specifications. Other advantages of this device include a rated pulsed drain current of 156 A and a wide temperature operating range up to 150 ^oC.

CSD18532Q5B

The CSD18532Q5B is a single 60-V N-Ch NexFET Power MOSFET optimized for low power loss with a low R_DS(ON) of 2.5 mΩ. This device was selected to operate as the reverse polarity MOSFET paired with the LM74700-Q1, so power loss, current ratings, and thermal characteristics are among the key specifications when selecting the appropriate device. The continuous rated current for this MOSFET is 23 A, which is above the expected peak current in the design. The device is also in a 5 mm x 6 mm package that is optimized for thermal dissipation. In addition to these specifications, the total gate charge of 44 nC is important to consider because that helps to determine how quickly the MOSFET can be switched off in the event of a reverse polarity detected.

TVS3301

The TVS3301 is a bi-directional flat-clamp surge protection device that serves the same functionality as a bidirectional TVS diode. This device is capable of protecting against the IEC 61000-4-5 surge current and voltage waveforms as well as against the IEC61643-321 waveforms. The device has a ±33V operating range, clamps the voltage to a maximum of 40 V during surge events, and is capable of sinking up to 27 A, which is defined by the IEC 61000-4-5. The device also has a low capacitance of 54 pF, which is beneficial especially in signal chain applications.

The largest benefits of the TVS3301 are highlighted when compared to traditional TVS diodes. The TVS3301 is a smart gate driver with integrated MOSFETs that have significantly lower on-state resistances than TVS diodes. The TVS3301 also integrated a feedback circuit to monitor the current, which is how it is able to clamp the over-voltage precisely at 40 V during surge events. The lower resistance of the TVS3301 means that it will have significantly smaller power dissipation during surge events and also allows the package to be significantly smaller than traditional SMA and SMB diode packages.

TPD4E1U06

The TPD4E1U06 is a quad channel, high-speed unidirectional ESD protection device that is capable of withstanding the ESD events as well as surge events. The device is specified to be capable of withstanding the IEC61000-4-2 Level 4 ESD events, which include ±15 kV contact discharge and ±15 kV air gap discharge. The device is also rated to withstand a 3 A surge of the IEC 61000-4-5 and an 80-A EFT event according to the IEC 61000-4-4. The device is also specified to have only 0.8 pF of line capacitance, which makes it an ideal choice for multiple applications including HDMI and USB2.0 communications. Another useful benefit of the device is the ultra-low leakage specified at a maximum of 10 nA, which helps maintain signal integrity and limit efficiency losses from incorporating the device.