SBOK078 October   2023 SN54SC4T08-SEP

PRODUCTION DATA  

  1.   1
  2.   2
  3.   Trademarks
  4. 1Overview
  5. 2Single-Event Effects (SEE)
  6. 3Test Device and Test Board Information
  7. 4Irradiation Facility and Setup
  8. 5Results
    1. 5.1 SEL Results
    2. 5.2 Event Rate Calculations
  9. 6Summary
  10. 7References

Abstract

The purpose of this study is to characterize the effects of heavy-ion irradiation on the single-event latch-up (SEL) performance of the SN54SC4T08-SEP, a four-channel, two-input positive AND gate with logic-level shifter. Heavy-ions with an LETEFF of 43 MeV-cm2 / mg were used to irradiate three production devices with a fluence of 1 × 107 ions / cm2. The results demonstrate that the SN54SC4T08-SEP is SEL-free up to LETEFF = 43 MeV-cm2 / mg at 125°C.