To do comparative analysis, a device designed for each of the following topologies was chosen:
PSR-flyback: LM25180-Q1
Push-pull: SN6507-Q1
Isolated DCDC module: UCC14130-Q1
LLC resonant: UCC25800-Q1
All the electrical parameters kept as similar as possible.
As shown in the project bock diagram, these isolated bias power supply devices are used in a distributed kind of architecture. Each device is used to supply one GaN switch with integrated driver. In each design, two isolated bias power supply circuits are used for a GaN half bridge.
Measurements, including efficiency, were taken at room temperature.
Efficiency reading was taken running one isolated bias power supply circuit only, while the other power supply circuit was disabled.
Efficiency measurement was done without EMI filter circuit.