SBAK033 February   2025 ADC168M102R-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Overview
  5. 2SEE Mechanisms
  6. 3Test Device and Test Board Information
  7. 4Irradiation Facility and Setup
  8. 5Single-Event Latch-Up Results
  9. 6Summary
  10. 7Confidence Interval Calculations
  11. 8References

Abstract

The purpose of this study is to characterize the effects of heavy-ion irradiation on the single-event latch-up (SEL) performance of the ADC168M102R-SEP, dual 16-bit analog-to-digital converter (ADC). Heavy- ions with an LETEFF of 48MeV-cm2/mg were used to irradiate the devices with a fluence of 1 × 107 ions/cm2. The results demonstrate that the ADC168M102R-SEP is SEL-free up to LETEFF = 48MeV-cm2/mg at 125°C.