SBOK051 November   2023 OPA4H014-SEP

PRODUCTION DATA  

  1.   1
  2.   OPA4H014-SEP Radiation Tolerant High-Speed, Quad-Channel Operational Amplifier TID Report
  3.   Trademarks
  4. 1Device Information
    1. 1.1 Product Description
    2. 1.2 Device Details
  5. 2Total Dose Test Setup
    1. 2.1 Test Overview
    2. 2.2 Test Description and Facilities
    3. 2.3 Test Setup Details
      1. 2.3.1 Biased Device Configuration
    4. 2.4 Test Configuration and Condition
  6. 3Total Ionizing Dose Characterization Test Results
    1. 3.1 HDR Characterization Results
    2. 3.2 LDR Characterization Results
    3. 3.3 ELDRS Characterization Results
    4. 3.4 Summary of Results
  7.   A High Dose Rate Total Ionizing Dose Report
  8.   B Low Dose Rate Total Ionizing Dose Report

2.4 Test Configuration and Condition

From initial HDR feasibility studies, the difference between pre and post irradiation was greater for samples that were biased; hence for RLAT, 22 sample units are used at the 50-300 rad(Si) / s dose level with biased setup conditions. This is repeated for each wafer lot. For this HDR characterization, 12 sample units were exposed under biased setup conditions.

For LDR characterization, five sample units were exposed under biased setup conditions and five sample units were exposed under unbiased conditions.

The tables below list the serialized samples used for HDR and LDR characterization, as well as the specification compliance matrix for the device.

Table 2-1 HDR = 59.2 rad(Si) / s Device Information
HDR = 59.2 rad(Si) / s
Total Samples: 12 (+ one control)
Exposure Levels
0 krad (Si) 10 krad(Si) 20 krad(Si) 30 krad(Si) 50 krad (Si)
16 1, 2, 3 4, 5, 6 7, 8, 9 10, 11, 12
Table 2-2 LDR = 10 mrad(Si) / s Device Information
LDR = 10 mrad(Si)/s
Total Samples: 10
Exposure Levels
10 krad(Si) 20 krad(Si) 30 krad(Si)
Biased: 1b, 2b, 3b, 4b, 5b
Unbiased: 6b, 7b, 8b, 9b, 10b		 Biased: 1c, 2c, 3c, 4c, 5c
Unbiased: 6c, 7c, 8c, 9c, 10c		 Biased: 1d, 2d, 3d, 4d, 5d
Unbiased: 6d, 7d, 8d, 9d, 10d
Table 2-3 OPA4H014-SEP Specification Compliance Matrix
Parameter Test Condition OPA4H014-SEP Data Sheet (SBOSA94) Test Number
MIN TYP MAX Unit
Input offset voltage ±30 ±120 µV 500.0-503.0, 710.0-713.0, 730.0-733.0
VS = ±9 V ±220 1100.0-1103.0, 1900.0-1903.0, 2100.0-2103.0, 2310.0-2313.0, 2330.0-2333.0, 2510.0-2513.0, 2530.0-2533.0, 3110.0-3113.0
Power-supply rejection ratio ±0.1 ±0.5 µV/V 3700.0-3703.0
Input bias current ±0.5 ±10 pA 1300.0-1303.0, 1500.0-1503.0
Input offset current ±0.5 ±10 1700.0-1703.0
Common-mode rejection ratio VS = ±9 V, (V–) – 0.1 V < VCM < (V+) – 3.5 V 126 140 dB 3900.0-3903.0
Open-loop voltage gain (V–) + 0.35 V < VOUT < (V+) – 0.35 V, RL = 10 kΩ 120 126 dB 2540.0-2543.0
(V–) + 0.35 V < VOUT < (V+) – 0.35 V, RL = 2 kΩ 114 126 740.0-743.0, 2340.0-2343.0
Gain bandwidth 11 MHz 2900.0-2903.0
Slew rate 20 V/µs 2700.0-2703.0, 2710.0-2713.0
Voltage output swing from rail RL = 10 kΩ, AOL ≥ 108 dB (V–) + 0.2 (V–) + 0.2 V 2500.0-2503.0, 2520.0-2523.0
RL = 2 kΩ, AOL ≥ 108 dB (V+) – 0.35 (V+) – 0.35 700.0-703.0, 720.0-723.0, 2300.0-2303.0, 2320.0-2323.0
Short-circuit current Source 36 mA 3300.0-3303.0
Sink –30 3500.0-3503.0
Quiescent current (per amplifier) IO = 0 A 1.8 2 mA 300.0-300.1, 900.0-900.1, 4100.0-4100.1, 4500.0, 4500.1