SBOK095 December   2024 TRF0208-SP

 

  1.   1
  2.    TRF0208-SP, Near-DC to 11GHz, Fully Differential RF Amplifier Single-Event Effects (SEE) Radiation Report
  3.   Trademarks
  4. 1 Overview
  5. 2 Single-Event Effects
  6. 3 Test Device and Evaluation Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Set-Up and Procedures
  10. 7 Single-Event Latch-up (SEL) Results
  11. 8 Single-Event Transients (SET) Results
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A Total Ionizing Dose from SEE Experiments
  15.   B Confidence Interval Calculations
  16.   C References

5 Depth, Range, and LETEFF Calculation

The TRF0208-SP is fabricated in the TI BiCMOS process and the die is packaged as a flip chip. The decapped unit exposes the silicon substrate directly when packaged in the flip-chip configuration. The units used were background to 50 microns, for proper ion penetration. The effective LET (LETEFF), depth and range was determined with the custom RADsim - IONS application (developed at Texas Instruments and based on the latest SRIM2013 [5] models). The applications accounts for energy loss through the 1-mil thick Aramica (DuPont®Kevlar®) beam port window and the air gap between the DUT and the heavy-ion exit port (40 mm). An image of the RADsim - IONS is shown in Figure 5-1 and the ions details are provided in Table 5-1.

GUI of RADsim Application Used to Determine Key Ion ParametersFigure 5-1 GUI of RADsim Application Used to Determine Key Ion Parameters
Table 5-1 LETEFF, Depth and Range for the Ions Used for SEE Characterization of the TRF0208-SP
Ion TypeAngle of Incidence (°)Depth in Silicon (µm)Range in Silicon (µm)LETEFF (MeV-cm2/mg)Distance (mm)

Ar

0

50

50

9.62

40

Cu0505024.5440
Kr0505036.140
Ag0505057.7340
Ho0505081.640