SBOS014B September   2000  – January 2026 INA114

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Pin Configuration and Functions
  6. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6Application and Implementation
    1. 6.1 Application Information
      1. 6.1.1 Setting the Gain
      2. 6.1.2 Noise Performance
      3. 6.1.3 Offset Trimming
      4. 6.1.4 Input Bias Current Return Path
      5. 6.1.5 Input Common-Mode Range
      6. 6.1.6 Input Protection
      7. 6.1.7 Output Voltage Sense (SOIC-16 Package Only)
    2. 6.2 Typical Applications
  8. 7Device and Documentation Support
    1. 7.1 Device Nomenclature
    2. 7.2 Receiving Notification of Documentation Updates
    3. 7.3 Support Resources
    4. 7.4 Trademarks
    5. 7.5 Electrostatic Discharge Caution
    6. 7.6 Glossary
  9. 8Revision History
  10. 9Mechanical, Packaging, and Orderable Information

6.1.1 Setting the Gain

Gain of the INA114 is set by connecting a single external resistor, RG:

Equation 1. G = 1 + 50   k Ω R G

Figure 6-1 shows commonly used gains and resistor values.

The 50‑kΩ term in Equation 1 comes from the sum of the two internal feedback resistors. These resistors are on-chip metal film resistors which are laser trimmed to accurate absolute values. The accuracy and temperature coefficient of these resistors are included in the gain accuracy and drift specifications of the INA114.

The stability and temperature drift of the external gain setting resistor, RG, also affects gain. The contribution of RG to gain accuracy and drift is directly inferred from the gain Equation 1. Low resistor values required for high gain can make wiring resistance important. Sockets add to the wiring resistance, which contributes additional gain error (possibly an unstable gain error) in gains of approximately 100 or greater.