SBOS061D February   1997  – December 2025 XTR105

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Thermal Information
    4. 5.4 Electrical Characteristics
    5. 5.5 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Linearization
        1. 6.3.1.1 High-Resistance RTDs
      2. 6.3.2 Voltage Regulator
      3. 6.3.3 Open-Circuit Protection
      4. 6.3.4 Reverse-Voltage Protection
      5. 6.3.5 Surge Protection
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 External Transistor
      2. 7.1.2 Loop Power Supply
      3. 7.1.3 2-Wire and 3-Wire RTD Connections
      4. 7.1.4 Radio Frequency Interference
      5. 7.1.5 Error Analysis
    2. 7.2 Typical Applications
    3. 7.3 Layout
      1. 7.3.1 Layout Guidelines
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Device Support
        1. 8.1.1.1 Device Nomenclature
      2. 8.1.2 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

8.5 Electrostatic Discharge Caution

XTR105 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.