SBOS069B October   1997  – December 2025 INA122

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Setting the Gain
      2. 6.3.2 Input Common-Mode Range
      3. 6.3.3 Input Protection
      4. 6.3.4 Output Current Range
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Offset Trimming
      2. 7.1.2 Input Bias Current Return Path
    2. 7.2 Typical Application
      1. 7.2.1 Resistive-Bridge Pressure Sensor
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
        3. 7.2.1.3 Application Curve
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Device Nomenclature
    2. 8.2 Development Support
      1. 8.2.1 PSpice® for TI
      2. 8.2.2 TINA-TI (Free Software Download)
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

5 Specifications

Note:

TI has qualified multiple fabrication flows for this device. Differences in performance are labeled by chip site origin (CSO). For system robustness, designing for all flows is highly recommended. For more information, please see Section 8.1.1.